Title: Methods and devices for fabricating and assembling printable semiconductor elements

Abstract

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Inventors:

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

Issue Date:

Tue Sep 19 00:00:00 EDT 2017

Research Org.:

Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1393416

Patent Number(s):

9768086

Application Number:

15/084,211

Assignee:

THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

Show more

B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS

B81C2201/0185 - Printing, e.g. microcontact printing

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02521 - {Materials}
H01L21/02603 - {Nanowires}
H01L21/02628 - {using solutions}
H01L21/308 - using masks
H01L21/322 - to modify their internal properties, e.g. to produce internal imperfections
H01L21/6835 - {using temporarily an auxiliary support}
H01L2221/68368 - used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
H01L2221/68381 - Details of chemical or physical process used for separating the auxiliary support from a device or wafer
H01L2224/03 - Manufacturing methods
H01L2224/0332 - Screen printing, i.e. using a stencil
H01L2224/0345 - Physical vapour deposition [PVD], e.g. evaporation, or sputtering
H01L2224/03614 - by chemical means only
H01L2224/0362 - Photolithography
H01L2224/05073 - Single internal layer
H01L2224/05082 - Two-layer arrangements
H01L2224/05124 - Aluminium [Al] as principal constituent
H01L2224/05144 - Gold [Au] as principal constituent
H01L2224/05155 - Nickel [Ni] as principal constituent
H01L2224/05166 - Titanium [Ti] as principal constituent
H01L2224/05552 - in top view
H01L2224/05553 - being rectangular
H01L2224/05554 - being square
H01L2224/05555 - being circular or elliptic
H01L2224/05644 - Gold [Au] as principal constituent
H01L2224/05666 - Titanium [Ti] as principal constituent
H01L2224/08225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/2919 - with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L2224/32225 - the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L2224/80 - Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/80006 - being a temporary or sacrificial substrate
H01L2224/80121 - Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
H01L2224/80862 - Heat curing
H01L2224/80895 - between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
H01L2224/83 - using a layer connector
H01L2224/83005 - being a temporary or sacrificial substrate
H01L2224/83121 - Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
H01L2224/83192 - wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
H01L2224/83193 - wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
H01L2224/8385 - using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
H01L2224/83862 - Heat curing
H01L2224/9202 - Forming additional connectors after the connecting process
H01L2224/94 - at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
H01L2224/95 - at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
H01L2224/97 - the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
H01L23/02 - Containers
H01L24/03 - {Manufacturing methods}
H01L24/05 - {of an individual bonding area}
H01L24/08 - {of an individual bonding area}
H01L24/29 - {of an individual layer connector}
H01L24/32 - {of an individual layer connector}
H01L24/80 - {Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected}
H01L24/83 - {using a layer connector}
H01L24/94 - {at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices}
H01L24/97 - {the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting}
H01L25/0753 - {the devices being arranged next to each other}
H01L27/1285 - {using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors}
H01L27/1292 - {using liquid deposition, e.g. printing}
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/06 - characterised by their shape
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/0673 - {oriented parallel to a substrate}
H01L29/0676 - {oriented perpendicular or at an angle to a substrate}
H01L29/068 - {comprising a junction}
H01L29/12 - characterised by the materials of which they are formed
H01L29/76 - Unipolar devices {, e.g. field effect transistors}
H01L29/78603 - {characterised by the insulating substrate or support
H01L29/78681 - {having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te}
H01L29/78696 - {characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/00012 - Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/01032 - Germanium [Ge]
H01L2924/0665 - Epoxy resin
H01L2924/10253 - Silicon [Si]
H01L2924/10329 - Gallium arsenide [GaAs]
H01L2924/12032 - Schottky diode
H01L2924/12036 - PN diode
H01L2924/12041 - LED
H01L2924/12042 - LASER
H01L2924/12043 - Photo diode
H01L2924/12044 - OLED
H01L2924/1305 - Bipolar Junction Transistor [BJT]
H01L2924/13055 - Insulated gate bipolar transistor [IGBT]
H01L2924/1306 - Field-effect transistor [FET]
H01L2924/13063 - Metal-Semiconductor Field-Effect Transistor [MESFET]
H01L2924/13091 - Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
H01L2924/14 - Integrated circuits
H01L2924/1461 - MEMS
H01L2924/15159 - Side view
H01L2924/15162 - Top view
H01L2924/15788 - Glasses, e.g. amorphous oxides, nitrides or fluorides
H01L2924/1579 - with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/03926 - {comprising a flexible substrate}
H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/1864 - {Annealing}
H01L31/1896 - {for thin-film semiconductors}
H01L33/007 - {comprising nitride compounds}
H01L33/32 - containing nitrogen

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/707 - having different types of nanoscale structures or devices on a common substrate
Y10S977/724 - Devices having flexible or movable element

Show less

DOE Contract Number:  

FG02-91ER45439

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Mar 29

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE