Title: Seed-mediated growth of patterned graphene nanoribbon arrays

Abstract

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays, and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a seed-mediated, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of a semiconductor substrate and the orientation of the seed particles on the substrate are used to orient the graphene nanoribbon crystals preferentially along a single [110] direction of the substrate.

Inventors:

Arnold, Michael Scott; Way, Austin James; Jacobberger, Robert Michael

Issue Date:

2017-09-12

Research Org.:

Wisconsin Alumni Research Foundation, Madison, WI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1389825

Patent Number(s):

9761669

Application Number:

15/212,413

Assignee:

Wisconsin Alumni Research Foundation

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02433 - {Crystal orientation}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/0259 - {Microstructure}
H01L21/02609 - {Crystal orientation}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02645 - {Seed materials}
H01L21/6835 - {using temporarily an auxiliary support}
H01L21/6836 - {Wafer tapes, e.g. grinding or dicing support tapes
H01L2221/68368 - used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
H01L29/0665 - {the shape of the body defining a nanostructure
H01L29/1606 - {Graphene}
H01L29/78684 - {having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
H01L29/78696 - {characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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DOE Contract Number:  

SC0006414

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Jul 18

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY