Title: Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

Abstract

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

Inventors:

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

Issue Date:

2017-09-05

Research Org.:

The University of Kentucky Research Foundation, Lexington, KY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1378991

Patent Number(s):

9755023

Application Number:

13/630,875

Assignee:

The University of Kentucky Research Foundation

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02425 - {Conductive materials, e.g. metallic silicides}
H01L21/0254 - {Nitrides}
H01L21/02549 - {Antimonides}
H01L21/02573 - {Conductivity type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L29/2003 - {Nitride compounds}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P20/133 - Renewable energy sources

Show less

DOE Contract Number:  

FG02-07ER46375

Resource Type:

Patent

Resource Relation:

Patent File Date: 2012 Sep 28

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE