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Title: Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1378991
Assignee:
The University of Kentucky Research Foundation CHO
Patent Number(s):
9,755,023
Application Number:
13/630,875
Contract Number:
FG02-07ER46375
Resource Relation:
Patent File Date: 2012 Sep 28
Research Org:
The University of Kentucky Research Foundation, Lexington, KY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Giant and composition-dependent optical band gap bowing in dilute GaSb1−xNx alloys
journal, April 2006
  • Belabbes, A.; Ferhat, M.; Zaoui, A.
  • Applied Physics Letters, Vol. 88, Issue 15, Article No. 152109
  • DOI: 10.1063/1.2196049