Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode
Abstract
The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
- Inventors:
- Issue Date:
- Research Org.:
- The University of Kentucky Research Foundation, Lexington, KY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1378991
- Patent Number(s):
- 9755023
- Application Number:
- 13/630,875
- Assignee:
- The University of Kentucky Research Foundation
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- DOE Contract Number:
- FG02-07ER46375
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Sep 28
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, and Jasinski, Jacek B. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode. United States: N. p., 2017.
Web.
Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, & Jasinski, Jacek B. Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode. United States.
Menon, Madhu, Sheetz, Michael, Sunkara, Mahendra Kumar, Pendyala, Chandrashekhar, Sunkara, Swathi, and Jasinski, Jacek B. Tue .
"Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode". United States. https://www.osti.gov/servlets/purl/1378991.
@article{osti_1378991,
title = {Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode},
author = {Menon, Madhu and Sheetz, Michael and Sunkara, Mahendra Kumar and Pendyala, Chandrashekhar and Sunkara, Swathi and Jasinski, Jacek B.},
abstractNote = {The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {9}
}
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Works referenced in this record:
Giant and composition-dependent optical band gap bowing in dilute GaSb1−xNx alloys
journal, April 2006
- Belabbes, A.; Ferhat, M.; Zaoui, A.
- Applied Physics Letters, Vol. 88, Issue 15, Article No. 152109