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Title: Modification of electrical properties of topological insulators

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Issue Date:
OSTI Identifier:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2016 Jun 08
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Method for Forming an Implanted Area for a Heterojunction Transistor that is Normally Blocked
patent-application, April 2016

Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping
journal, October 2012
  • Choi, Y. H.; Jo, N. H.; Lee, K. J.
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Topological Insulator Materials
journal, October 2013
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Colloquium: Topological insulators
journal, November 2010

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journal, January 2013
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journal, May 2009
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Ion beam modification of topological insulator bismuth selenide
journal, December 2014
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  • Applied Physics Letters, Vol. 105, Issue 24, Article No. 242106
  • DOI: 10.1063/1.4904936

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