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Title: Modification of electrical properties of topological insulators

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Inventors:
Issue Date:
OSTI Identifier:
1377859
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
Patent Number(s):
9,748,345
Application Number:
15/177,215
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2016 Jun 08
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Works referenced in this record:

Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping
journal, October 2012
  • Choi, Y. H.; Jo, N. H.; Lee, K. J.
  • Applied Physics Letters, Vol. 101, Issue 15, Article No. 152103
  • DOI: 10.1063/1.4755767

Topological Insulator Materials
journal, October 2013
  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001

Colloquium: Topological insulators
journal, November 2010

Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
journal, January 2013
  • He, Liang; Kou, Xufeng; Wang, Kang L.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2, p. 50-63
  • DOI: 10.1002/pssr.201307003

p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications
journal, May 2009
  • Hor, Y. S.; Richardella, A.; Roushan, P.
  • Physical Review B, Vol. 79, Issue 19, Article No. 195208
  • DOI: 10.1103/PhysRevB.79.195208

Ion beam modification of topological insulator bismuth selenide
journal, December 2014
  • Sharma, P. A.; Lima Sharma, A. L.; Hekmaty, M.
  • Applied Physics Letters, Vol. 105, Issue 24, Article No. 242106
  • DOI: 10.1063/1.4904936