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Title: Avalanche diode having reduced dark current and method for its manufacture

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1377852
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
Patent Number(s):
9,748,429
Application Number:
14/870,195
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Sep 30
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Thin-film spectroscopic sensor
patent, January 1992

Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
patent, September 2005

Germanium silicon heterostructure photodetectors
patent, July 2008

Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
patent, November 2008

Defect reduction using aspect ratio trapping
patent, May 2012

Planar avalanche photodiode
patent-application, December 2004

Laterally-integrated waveguide photodetector apparatus and related coupling methods
patent-application, May 2007

Double quench circuit for an avalanche current device
patent-application, September 2008

Monolithic Three Terminal Photodetector
patent-application, May 2012

Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
journal, March 2007
  • Bai, J.; Park, J.-S.; Cheng, Z.
  • Applied Physics Letters, Vol. 90, Issue 10, Article No. 101902
  • DOI: 10.1063/1.2711276

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
journal, January 2007
  • Park, J.-S.; Bai, J.; Curtin, M.
  • Applied Physics Letters, Vol. 90, Issue 5, Article No. 052113
  • DOI: 10.1063/1.2435603

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