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Title: Avalanche diode having reduced dark current and method for its manufacture

Abstract

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1377852
Patent Number(s):
9748429
Application Number:
14/870,195
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States: N. p., 2017. Web.
Davids, Paul, Starbuck, Andrew Lee, & Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States.
Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Tue . "Avalanche diode having reduced dark current and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1377852.
@article{osti_1377852,
title = {Avalanche diode having reduced dark current and method for its manufacture},
author = {Davids, Paul and Starbuck, Andrew Lee and Pomerene, Andrew T. S.},
abstractNote = {An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

Works referenced in this record:

Thin-film spectroscopic sensor
patent, January 1992


Germanium silicon heterostructure photodetectors
patent, July 2008


Defect reduction using aspect ratio trapping
patent, May 2012


Planar avalanche photodiode
patent-application, December 2004


Laterally-integrated waveguide photodetector apparatus and related coupling methods
patent-application, May 2007


Double quench circuit for an avalanche current device
patent-application, September 2008


Monolithic Three Terminal Photodetector
patent-application, May 2012


Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
journal, March 2007


Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
journal, January 2007