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Title: Avalanche diode having reduced dark current and method for its manufacture

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1377852
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
Patent Number(s):
9,748,429
Application Number:
14/870,195
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Sep 30
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
journal, March 2007
  • Bai, J.; Park, J.-S.; Cheng, Z.
  • Applied Physics Letters, Vol. 90, Issue 10, Article No. 101902
  • DOI: 10.1063/1.2711276

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
journal, January 2007
  • Park, J.-S.; Bai, J.; Curtin, M.
  • Applied Physics Letters, Vol. 90, Issue 5, Article No. 052113
  • DOI: 10.1063/1.2435603