Avalanche diode having reduced dark current and method for its manufacture
Abstract
An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1377852
- Patent Number(s):
- 9748429
- Application Number:
- 14/870,195
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Sep 30
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States: N. p., 2017.
Web.
Davids, Paul, Starbuck, Andrew Lee, & Pomerene, Andrew T. S. Avalanche diode having reduced dark current and method for its manufacture. United States.
Davids, Paul, Starbuck, Andrew Lee, and Pomerene, Andrew T. S. Tue .
"Avalanche diode having reduced dark current and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1377852.
@article{osti_1377852,
title = {Avalanche diode having reduced dark current and method for its manufacture},
author = {Davids, Paul and Starbuck, Andrew Lee and Pomerene, Andrew T. S.},
abstractNote = {An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}
Works referenced in this record:
Thin-film spectroscopic sensor
patent, January 1992
- Burgess, Lloyd; Goldman, Don S.
- US Patent Document 5,082,629
Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
patent, September 2005
- Langdo, Thomas A.; Lochtefeld, Anthony J.
- US Patent Document 6,946,371
Germanium silicon heterostructure photodetectors
patent, July 2008
- Masini, Gianlorenzo; Gunn, III, Lawrence C.; Capellini, Giovanni
- US Patent Document 7,397,101
Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
patent, November 2008
- King, Clifford A.; Rafferty, Conor S.
- US Patent Document 7,453,129
Defect reduction using aspect ratio trapping
patent, May 2012
- Bai, Jie; Park, Ji-Soo; Lochtefeld, Anthony J.
- US Patent Document 8,173,551
Planar avalanche photodiode
patent-application, December 2004
- Ko, Cheng C.; Levine, Barry
- US Patent Application 10/836878; 20040251483
Laterally-integrated waveguide photodetector apparatus and related coupling methods
patent-application, May 2007
- Ahn, Donghwan; Liu, Jifeng; Michel, Jurgen
- US Patent Application 11/269907; 20070104441
Double quench circuit for an avalanche current device
patent-application, September 2008
- Deschamps, Pierre D.
- US Patent Application 11/726847; 20080231339
Monolithic Three Terminal Photodetector
patent-application, May 2012
- Na, Yun-chung N.; Kang, Yimin
- US Patent Application 12/952023; 20120126286
Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
journal, March 2007
- Bai, J.; Park, J.-S.; Cheng, Z.
- Applied Physics Letters, Vol. 90, Issue 10, Article No. 101902
Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
journal, January 2007
- Park, J.-S.; Bai, J.; Curtin, M.
- Applied Physics Letters, Vol. 90, Issue 5, Article No. 052113