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Title: Use of surfactants to control island size and density

Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1375209
Assignee:
University of Utah Research Foundation CHO
Patent Number(s):
9,735,008
Application Number:
14/063,143
Contract Number:
FG02-04ER46148
Resource Relation:
Patent File Date: 2013 Oct 25
Research Org:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Other works cited in this record:

The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
journal, September 2002
  • Zhang, L.; Tang, H. F.; Schieke, J.
  • Journal of Applied Physics, Vol. 92, Issue 5, p. 2304-2309
  • DOI: 10.1063/1.1495891

Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD
journal, February 2011
  • Sadasivam, Karthikeyan Giri; Shim, Jong-In; Lee, June Key
  • Journal of Nanoscience and Nanotechnology, Vol. 11, Issue 2, p. 1787-1790
  • DOI: 10.1166/jnn.2011.3387

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