Title: Epitaxial hexagonal materials on IBAD-textured substrates

Abstract

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

Inventors:

Matias, Vladimir; Yung, Christopher

Issue Date:

2017-08-15

Research Org.:

iBeam Materials, Inc., Santa Fe, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1375205

Patent Number(s):

9735318

Application Number:

15/041,017

Assignee:

iBeam Materials, Inc.

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02458 - {Nitrides}
H01L21/02483 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L21/02488 - {Insulating materials}
H01L21/02502 - {consisting of two layers}
H01L21/02516 - {Crystal orientation}
H01L21/0254 - {Nitrides}
H01L27/15 - including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission {
H01L33/02 - characterised by the semiconductor bodies
H01L33/16 - with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L33/32 - containing nitrogen

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DOE Contract Number:  

AR0000447

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Feb 10

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE