Title: Graphene heat dissipating structure

Abstract

Various technologies presented herein relate to forming one or more heat dissipating structures (e.g., heat spreaders and/or heat sinks) on a substrate, wherein the substrate forms part of an electronic component. The heat dissipating structures are formed from graphene, with advantage being taken of the high thermal conductivity of graphene. The graphene (e.g., in flake form) is attached to a diazonium molecule, and further, the diazonium molecule is utilized to attach the graphene to material forming the substrate. A surface of the substrate is treated to comprise oxide-containing regions and also oxide-free regions having underlying silicon exposed. The diazonium molecule attaches to the oxide-free regions, wherein the diazonium molecule bonds (e.g., covalently) to the exposed silicon. Attachment of the diazonium plus graphene molecule is optionally repeated to enable formation of a heat dissipating structure of a required height.

Inventors:

Washburn, Cody M.; Lambert, Timothy N.; Wheeler, David R.; Rodenbeck, Christopher T.; Railkar, Tarak A.

Issue Date:

2017-08-01

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1373709

Patent Number(s):

9721867

Application Number:

14/662,091

Assignee:

National Technology & Engineering Solutions of Sandia, LLC

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02115 - {the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon}
H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/02318 - {post-treatment}
H01L23/373 - Cooling facilitated by selection of materials for the device {or materials for thermal expansion adaptation, e.g. carbon}
H01L23/3737 - {Organic materials with or without a thermoconductive filler}
H01L2924/10271 - Silicon-germanium [SiGe]
H01L2924/10272 - Silicon Carbide [SiC]
H01L2924/10329 - Gallium arsenide [GaAs]
H01L2924/14 - Integrated circuits
H01L2924/1421 - RF devices

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Mar 18

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY