Surface passivation for CdTe devices

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

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Title: Surface passivation for CdTe devices

Abstract

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Inventors:: Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

Issue Date:: 2017-08-01

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1373708

Patent Number(s):: 9722111

Application Number:: 14/615,282

Assignee:: Alliance for Sustainable Energy, LLC

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02562 - {Tellurides}
H01L21/02664 - {Aftertreatments
H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Feb 05

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., and Metzger, Wyatt K. Surface passivation for CdTe devices.  United States: N. p., 2017. 
        Web.

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                    Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., & Metzger, Wyatt K. Surface passivation for CdTe devices.  United States.

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                    Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., and Metzger, Wyatt K. Tue .  
        "Surface passivation for CdTe devices".  United States.  https://www.osti.gov/servlets/purl/1373708.

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@article{osti_1373708,

  title        = {Surface passivation for CdTe devices},

  author       = {Reese, Matthew O. and Perkins, Craig L. and Burst, James M. and Gessert, Timothy A. and Barnes, Teresa M. and Metzger, Wyatt K.},

  abstractNote = {In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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Works referenced in this record:

Digital electrochemical etching of compound semiconductors
patent, January 1995

Stickney, John L.; Lei, Qing; Rhee, Choong K.
US Patent Document 5,385,651
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5385651

Production of clean, well-ordered CdTe surfaces using laser ablation
patent, October 1995

Zinck, Jennifer J.; Brewer, Peter D.
US Patent Document 5,454,902
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5454902

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
patent, June 1999

Gessert, Timothy A.
US Patent Document 5,909,632
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5909632

Method of producing photoelectric conversion device
patent, June 1999

Agui, Takaaki; Takamoto, Tatsuya
US Patent Document 5,916,375
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Ion-beam treatment to prepare surfaces of p-CdTe films
patent, August 2001

Gessert, Timothy A.
US Patent Document 6,281,035
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Plasma & reactive ion etching to prepare ohmic contacts
patent, October 2002

Gessert, Timothy A.
US Patent Document 6,458,254
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CdTe devices and method of manufacturing same
patent, September 2015

Gessert, Timothy A.; Noufi, Rommel; Dhere, Ramesh G.
US Patent Document 9,147,793
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9147793

Controlling the stoichiometry and doping of semiconductor materials
patent, August 2016

Albin, David S.; Burst, James; Metzger, Wyatt Keith
US Patent Document 9,419,170
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9419170

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Ma, Jie; Kuciauskas, Darius; Albin, David
Physical Review Letters, Vol. 111, Issue 6, Article No. 067402
https://doi.org/10.1103/PhysRevLett.111.067402

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
journal, November 1986

John, P.; Miller, T.; Hsieh, T. C.
Physical Review B, Vol. 34, Issue 10, p. 6704-6712
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Polycrystalline CdTe thin films for photovoltaic applications
journal, December 2006

Bosio, Alessio; Romeo, Nicola; Mazzamuto, Samantha
Progress in Crystal Growth and Characterization of Materials, Vol. 52, Issue 4, p. 247-279
https://doi.org/10.1016/j.pcrysgrow.2006.09.001

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

Metzger, W. K.; Albin, D.; Levi, D.
Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
https://doi.org/10.1063/1.1597974

Luminescence effects of ion-beam bombardment of CdTe surfaces
journal, September 2009

Olvera, J.; Martínez, O.; Plaza, J. L.
Journal of Luminescence, Vol. 129, Issue 9, p. 941-944
https://doi.org/10.1016/j.jlumin.2009.04.004

Surface passivation by sulfur treatment of undoped p-CdTe(100)
journal, August 2000

Kang, C. K.; Yuldashev, Sh. U.; Leem, J. H.
Journal of Applied Physics, Vol. 88, Issue 4, p. 2013-2015
https://doi.org/10.1063/1.1305551

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Similar Records

Title: Surface passivation for CdTe devices

Abstract

Citation Formats

Digital electrochemical etching of compound semiconductors patent, January 1995

Production of clean, well-ordered CdTe surfaces using laser ablation patent, October 1995

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films patent, June 1999

Method of producing photoelectric conversion device patent, June 1999

Ion-beam treatment to prepare surfaces of p-CdTe films patent, August 2001

Plasma & reactive ion etching to prepare ohmic contacts patent, October 2002

CdTe devices and method of manufacturing same patent, September 2015

Controlling the stoichiometry and doping of semiconductor materials patent, August 2016

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations journal, August 2013

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage journal, November 1986

Polycrystalline CdTe thin films for photovoltaic applications journal, December 2006

Time-resolved photoluminescence studies of CdTe solar cells journal, September 2003

Luminescence effects of ion-beam bombardment of CdTe surfaces journal, September 2009

Surface passivation by sulfur treatment of undoped p-CdTe(100) journal, August 2000

Digital electrochemical etching of compound semiconductors
patent, January 1995

Production of clean, well-ordered CdTe surfaces using laser ablation
patent, October 1995

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
patent, June 1999

Method of producing photoelectric conversion device
patent, June 1999

Ion-beam treatment to prepare surfaces of p-CdTe films
patent, August 2001

Plasma & reactive ion etching to prepare ohmic contacts
patent, October 2002

CdTe devices and method of manufacturing same
patent, September 2015

Controlling the stoichiometry and doping of semiconductor materials
patent, August 2016

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
journal, November 1986

Polycrystalline CdTe thin films for photovoltaic applications
journal, December 2006

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

Luminescence effects of ion-beam bombardment of CdTe surfaces
journal, September 2009

Surface passivation by sulfur treatment of undoped p-CdTe(100)
journal, August 2000