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Title: Surface passivation for CdTe devices

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1373708
Assignee:
Alliance for Sustainable Energy, LLC NREL
Patent Number(s):
9,722,111
Application Number:
14/615,282
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2015 Feb 05
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Digital electrochemical etching of compound semiconductors
patent, January 1995

Production of clean, well-ordered CdTe surfaces using laser ablation
patent, October 1995

Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
patent, June 1999

Method of producing photoelectric conversion device
patent, June 1999

Ion-beam treatment to prepare surfaces of p-CdTe films
patent, August 2001

Plasma & reactive ion etching to prepare ohmic contacts
patent, October 2002

CdTe devices and method of manufacturing same
patent, September 2015

Controlling the stoichiometry and doping of semiconductor materials
patent, August 2016

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
journal, November 1986

Polycrystalline CdTe thin films for photovoltaic applications
journal, December 2006
  • Bosio, Alessio; Romeo, Nicola; Mazzamuto, Samantha
  • Progress in Crystal Growth and Characterization of Materials, Vol. 52, Issue 4, p. 247-279
  • DOI: 10.1016/j.pcrysgrow.2006.09.001

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003
  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Luminescence effects of ion-beam bombardment of CdTe surfaces
journal, September 2009

Surface passivation by sulfur treatment of undoped p-CdTe(100)
journal, August 2000
  • Kang, C. K.; Yuldashev, Sh. U.; Leem, J. H.
  • Journal of Applied Physics, Vol. 88, Issue 4, p. 2013-2015
  • DOI: 10.1063/1.1305551

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