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Title: Surface passivation for CdTe devices

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.
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Issue Date:
OSTI Identifier:
Alliance for Sustainable Energy, LLC NREL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Feb 05
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
journal, November 1986

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  • DOI: 10.1016/j.pcrysgrow.2006.09.001

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journal, September 2003
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  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Luminescence effects of ion-beam bombardment of CdTe surfaces
journal, September 2009

Surface passivation by sulfur treatment of undoped p-CdTe(100)
journal, August 2000
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