Title: Tetradymite layer assisted heteroepitaxial growth and applications

Abstract

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

Inventors:

Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

Issue Date:

2017-08-01

Research Org.:

Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1373707

Patent Number(s):

9722113

Application Number:

14/807,378

Assignee:

THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02439 - {Materials}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/02483 - {Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02502 - {consisting of two layers}
H01L21/02551 - {Group 12/16 materials}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L22/12 - {for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
H01L31/032 - including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
H01L31/0322 - {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/035272 - {characterised by at least one potential jump barrier or surface barrier}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/0725 - Multiple junction or tandem solar cells
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/1864 - {Annealing}
H01L33/005 - {Processes}
H01L33/12 - with a stress relaxation structure, e.g. buffer layer
H01L33/26 - Materials of the light emitting region

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/541 - CuInSe2 material PV cells

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DOE Contract Number:  

SC0000957

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Jul 23

Country of Publication:

United States

Language:

English

Subject:

14 SOLAR ENERGY; 36 MATERIALS SCIENCE