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Title: Tetradymite layer assisted heteroepitaxial growth and applications

A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1373707
Assignee:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN EFRC
Patent Number(s):
9,722,113
Application Number:
14/807,378
Contract Number:
SC0000957
Resource Relation:
Patent File Date: 2015 Jul 23
Research Org:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Works referenced in this record:

Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
journal, October 2010
  • Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping
  • Applied Physics Letters, Vol. 97, Issue 14, Article No. 143118
  • DOI: 10.1063/1.3494595

Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer
journal, December 2011
  • Hu, Songbai; Zhu, Zhe; Li, Wei
  • AIP Advances, Vol. 1, Issue 4, Article No. 042152
  • DOI: 10.1063/1.3663613

Comparative Study of the Microstructure of Bi2Se3 Thin Films Grown on Si(111) and InP(111) Substrates
journal, March 2012
  • Tarakina, N. V.; Schreyeck, S.; Borzenko, T.
  • Crystal Growth & Design, Vol. 12, Issue 4, p. 1913-1918
  • DOI: 10.1021/cg201636g