Global to push GA events into
skip to main content

Title: Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
Issue Date:
OSTI Identifier:
Alliance for Sustainable Energy, LLC NREL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 May 29
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Excimer-pumped four level blue-green solid state laser
patent, August 1981

Fabrication of gallium arsenide-germanium heteroface junction device
patent, August 1983

Solar cells based on indium phosphide
patent, May 1986

Method of diffusing plurality of dopants simultaneously from vapor phase into semiconductor substrate
patent, July 1990

Method of growing p-type group II-VI material
patent, July 1991

Process of making strain-free, carbon-doped epitaxial layers and products so made
patent, May 1992

Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions
patent, October 1992

GaAs device having a strain-free c-doped layer
patent, July 1993

Diffusion control of p-n junction location in multilayer heterostructure light emitting devices
patent, September 1994

Method of making a semiconductor device including carbon as a dopant
patent, February 1995

Semiconductor arrangement made of compound semiconductor material
patent, June 1995

Method for making an interconnection structure for integrated circuits
patent, September 1995

Precursor for semiconductor thin films and method for producing semiconductor thin films
patent, March 1998

Method of fabricating opto-electronic device
patent, July 1998

Semiconductor light-emitting device and production method thereof
patent, April 1999

High-efficiency solar cell and method for fabrication
patent, August 1999

Quantum-dot cascade laser
patent, October 1999

Epitaxial wafer for a light-emitting diode and a light-emitting diode
patent, November 1999

Rigid thin windows for vacuum applications
patent, December 1999

Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
patent, July 2002

Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
patent, November 2003

Isoelectronic co-doping
patent, November 2004

Heterojunction bipolar transistor with a base layer that contains bismuth
patent, August 2005

Heterojunction bipolar transistor with a base layer that contains bismuth
patent, March 2006

Heterojunction bipolar transistor with a base layer that contains bismuth
patent, June 2006

GaP/silicon tandem solar cell with extended temperature range
patent, December 2006

Bipolar transistors with low parasitic losses
patent, May 2008

Isoelectronic co-doping
patent-application, August 2002

Semiconductor device and manufacturing method of the same
patent-application, March 2004

Semiconductor device
patent-application, December 2005

Boron, Bismuth Co-Doping of Gallium Arsenide and Other Compounds for Photonic and Heterojunction Bipolar Transistor Devices
patent-application, December 2013

High p‐type conductivity in cubic GaN/GaAs(113) A by using Be as the acceptor and O as the codopant
journal, October 1996
  • Brandt, Oliver; Yang, Hui; Kostial, Helmar
  • Applied Physics Letters, Vol. 69, Issue 18, p. 2707-2709
  • DOI: 10.1063/1.117685

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 x Bi x
journal, February 2011

Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
journal, July 1996

Molecular doping of gallium nitride
journal, January 1999
  • Pankove, J. I.; Torvik, J. T.; Qiu, C.-H.
  • Applied Physics Letters, Vol. 74, Issue 3, p. 416-418
  • DOI: 10.1063/1.123046

Doping of group III nitrides
journal, May 1998
  • Ploog, Klaus H.; Brandt, Oliver
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 3, p. 1609-1614
  • DOI: 10.1116/1.581128

Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
journal, October 1966

Ion‐beam synthesis and stability of GaAs nanocrystals in silicon
journal, April 1996
  • White, C. W.; Budai, J. D.; Zhu, J. G.
  • Applied Physics Letters, Vol. 68, Issue 17, p. 2389-2391
  • DOI: 10.1063/1.116143

Similar records in DOepatents and OSTI.GOV collections: