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Title: Dry etch method for texturing silicon and device

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1372649
Assignee:
International Business Machines Corporation DOEEE
Patent Number(s):
9,716,195
Application Number:
14/747,954
Contract Number:
EE0006334
Resource Relation:
Patent File Date: 2015 Jun 23
Research Org:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Plasma Etching Method
patent-application, February 2014

Hydrogen Sulfide as an Etchant for Silicon
journal, January 1969
  • Rai-Choudhury, P.; Noreika, A. J.
  • Journal of The Electrochemical Society, Vol. 116, Issue 4, p. 539-541
  • DOI: 10.1149/1.2411945

Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3 Gas Mixtures
journal, January 1995
  • Legtenberg, Rob; Jansen, Henri; de Boer, Meint
  • Journal of The Electrochemical Society, Vol. 142, Issue 6, p. 2020-2028
  • DOI: 10.1149/1.2044234