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Title: Dry etch method for texturing silicon and device

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.
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Issue Date:
OSTI Identifier:
International Business Machines Corporation DOEEE
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Jun 23
Research Org:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Gaseous nonpreferential etching of silicon
patent, July 1972

Dry etching method
November 1993

Dry etching method
patent, May 1994

Dry etching method using (SN)x protective layer
patent, May 1994

Epitaxial growth of CZT(S,Se) on silicon
patent, March 2016

User Control Interface
patent-application, January 2009

Copper Layer Processing
patent-application, March 2010

Dry Etching Method
patent-application, May 2012

Method and Apparatus to Control Surface Texture Modification of Silicon Wafers for Photovoltaic Cell Devices
patent-application, March 2013

Polycrystalline-Type Solar Cell Panel and Process For Production Thereof
patent-application, April 2013

Plasma Etching Method
patent-application, February 2014

Hydrogen Sulfide as an Etchant for Silicon
journal, January 1969
  • Rai-Choudhury, P.; Noreika, A. J.
  • Journal of The Electrochemical Society, Vol. 116, Issue 4, p. 539-541
  • DOI: 10.1149/1.2411945

Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3 Gas Mixtures
journal, January 1995
  • Legtenberg, Rob; Jansen, Henri; de Boer, Meint
  • Journal of The Electrochemical Society, Vol. 142, Issue 6, p. 2020-2028
  • DOI: 10.1149/1.2044234

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