Title: Reconfigurable and writable magnetic charge crystals

Abstract

Artificial ices enable the study of geometrical frustration by design and through direct observation. It has, however, proven difficult to achieve tailored long-range ordering of their diverse configurations, limiting both fundamental and applied research directions. An artificial spin structure design is described that produces a magnetic charge ice with tunable long-range ordering of eight different configurations. A technique is also developed to precisely manipulate the local magnetic charge states and demonstrate write-read-erase multi-functionality at room temperature. This globally reconfigurable and locally writable magnetic charge ice provides a setting for designing magnetic monopole defects, tailoring magnetics and controlling the properties of other two-dimensional materials.

Inventors:

Wang, Yong-Lei; Xiao, Zhi-Li; Kwok, Wai-Kwong

Issue Date:

2017-07-18

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1371845

Patent Number(s):

9711201

Application Number:

15/280,915

Assignee:

UCHICAGO ARGONNE, LLC

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

G03F7/0002 - {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
G03F7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

G - PHYSICS G11 - INFORMATION STORAGE G11C - STATIC STORES

G11C11/14 - using thin-film elements
G11C11/161 - {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
G11C11/1673 - {Reading or sensing circuits or methods}
G11C11/1675 - {Writing or programming circuits or methods}
G11C11/56 - using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Sep 29

Country of Publication:

United States

Language:

English

Subject:

47 OTHER INSTRUMENTATION