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Title: Large-area, laterally-grown epitaxial semiconductor layers

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1371757
Assignee:
Yale University DOESC
Patent Number(s):
9,711,352
Application Number:
14/776,634
Contract Number:
SC0001134
Resource Relation:
Patent File Date: 2014 Mar 14
Research Org:
Yale Univ., New Haven, CT (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Works referenced in this record:

Substrate for epitaxy
patent-application, December 2004

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010