Title: Large-area, laterally-grown epitaxial semiconductor layers

Abstract

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Inventors:

Han, Jung; Song, Jie; Chen, Danti

Issue Date:

2017-07-18

Research Org.:

Yale Univ., New Haven, CT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1371757

Patent Number(s):

9711352

Application Number:

14/776,634

Assignee:

Yale University

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B25/04 - Pattern deposit, e.g. by using masks
C30B29/406 - {Gallium nitride}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02433 - {Crystal orientation}
H01L21/02458 - {Nitrides}
H01L21/0254 - {Nitrides}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02639 - {Preparation of substrate for selective deposition}
H01L21/02647 - {Lateral overgrowth}
H01L23/49827 - {Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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DOE Contract Number:  

SC0001134

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Mar 14

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY