Global to push GA events into
skip to main content

Title: Large-area, laterally-grown epitaxial semiconductor layers

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.
; ;
Issue Date:
OSTI Identifier:
Yale University DOESC
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2014 Mar 14
Research Org:
Yale Univ., New Haven, CT (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Confined lateral selective epitaxial growth
patent, August 1990

Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material
patent, August 1990

Method for the growing of heteroepitaxial layers
patent, October 1994

Method for manufacturing group III-V compound semiconductor crystals
patent, December 1996

Methods and devices using group III nitride compound semiconductor
patent, September 2003

Method of patterning elements within a semiconductor topography
patent, June 2008

Non-polar and semi-polar GaN substrates, devices, and methods for making them
patent, June 2010

Method of forming a trench by a silicon-containing mask
patent, August 2012

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
December 2002

GaN selective growth on SiC substrates by ammonia-source MBE
patent-application, December 2002

Semiconductor device and method for manufacturing
patent-application, November 2003

Sacrificial template method of fabricating a nanotube
patent-application, September 2004

Substrate for epitaxy
patent-application, December 2004

Light Emitting Diode With Porous Sic Substrate And Method For Fabricating
patent-application, August 2005

Lattice-mismatched semiconductor structures employing seed layers and related fabrication methods
patent-application, June 2006

Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
patent-application, December 2006

Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
patent-application, January 2007

Group III nitride semiconductor stacked structure and production method thereof
patent-application, April 2007

Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
patent-application, February 2008

Light-Emitter-Based Devices with Lattice-Mismatched Semiconductor Structures
patent-application, April 2008

Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
patent-application, January 2009

Epitaxial Methods And Templates Grown By The Methods
patent-application, July 2008

Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
patent-application, January 2010

Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
patent-application, April 2010

Method For Producing Trench Isolation In Silicon Carbide And Gallium Nitride And Articles Made Thereby
patent-application, May 2010

Integrated Circuitry And Methods Of Forming A Semiconductor-On-Insulator Substrate
patent-application, July 2010

Epitaxial Methods And Structures For Forming Semiconductor Materials
patent-application, July 2010

Migration And Plasma Enhanced Chemical Vapor Deposition
patent-application, August 2010

Methods Of Solid Phase Recrystallization Of Thin Film Using Pulse Train Annealing Method
patent-application, March 2011

Forming A Compound-Nitride Structure That Includes A Nucleation Layer
patent-application, October 2011

Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy
patent-application, October 2011

Gan-Based Laser Diodes With Misfit Dislocations Displaced From The Active Region
patent-application, December 2011

Confined Lateral Growth of Crystalline Material
patent-application, February 2012

Homo-Material Heterophased Quantum Well
patent-application, February 2012

III Nitride Semiconductor Substrate, Epitaxial Substrate, And Semiconductor Device
patent-application, May 2012

Electromechanical Transducer And Method Of Fabricating The Same
patent-application, May 2012

Methods Of Manufacturing Semiconductor Devices
patent-application, May 2012

Semiconductor Structures Including Bodies Of Semiconductor Material, Devices Including Such Structures And Related Methods
patent-application, January 2013

Opto-Electronic And Electronic Devices Using An N-Face Or M-Plane Gallium Nitride Substrate Prepared Via Ammonothermal Growth
patent-application, January 2013

Methods and Systems for Optical Receivers
patent-application, November 2013

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010

Similar records in DOepatents and OSTI.GOV collections: