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Title: Form of silicon and method of making the same

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1368215
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON EFRC
Patent Number(s):
9,695,051
Application Number:
14/903,131
Contract Number:
SC0001057
Resource Relation:
Patent File Date: 2014 Jul 08
Research Org:
Energy Frontier Research Centers
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English

Works referenced in this record:

Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties
journal, December 2012
  • Kurakevych, Oleksandr O.; Strobel, Timothy A.; Kim, Duck Young
  • Crystal Growth & Design, Vol. 13, Issue 1, p. 303-307
  • DOI: 10.1021/cg3017084

Influence of the special features of atomic structure of Si24 and MeSi24 (Me = Na or K) nanoparticles on their electron properties
journal, February 2006
  • Borshch, N. A.; Pereslavtseva, N. S.; Kurganskii, S. I.
  • Russian Physics Journal, Vol. 49, Issue 2, p. 170-176
  • DOI: 10.1007/s11182-006-0083-z