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Title: Form of silicon and method of making the same

The invention relates to a new phase of silicon, Si.sub.24, and a method of making the same. Si.sub.24 has a quasi-direct band gap, with a direct gap value of 1.34 eV and an indirect gap value of 1.3 eV. The invention also relates to a compound of the formula Na.sub.4Si.sub.24 and a method of making the same. N.sub.a4Si.sub.24 may be used as a precursor to make Si.sub.24.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1368215
Assignee:
CARNEGIE INSTITUTION OF WASHINGTON EFRC
Patent Number(s):
9,695,051
Application Number:
14/903,131
Contract Number:
SC0001057
Resource Relation:
Patent File Date: 2014 Jul 08
Research Org:
Energy Frontier Research Centers
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English

Other works cited in this record:

Clathrate compounds and processes for production thereof
patent, September 1998

Clathrate compounds and manufacturing method thereof
patent, October 2002

Nanostructured materials for hydrogen storage
patent, December 2007

Clathrate Compounds and Methods Of Manufacturing
patent-application, October 2009

Clathrate Allotropes For Rechargeable Batteries
patent-application, November 2012

Na-Si Clathrates Are High-Pressure Phases: A Melt-Based Route to Control Stoichiometry and Properties
journal, December 2012
  • Kurakevych, Oleksandr O.; Strobel, Timothy A.; Kim, Duck Young
  • Crystal Growth & Design, Vol. 13, Issue 1, p. 303-307
  • DOI: 10.1021/cg3017084

Influence of the special features of atomic structure of Si24 and MeSi24 (Me = Na or K) nanoparticles on their electron properties
journal, February 2006
  • Borshch, N. A.; Pereslavtseva, N. S.; Kurganskii, S. I.
  • Russian Physics Journal, Vol. 49, Issue 2, p. 170-176
  • DOI: 10.1007/s11182-006-0083-z

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