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Title: Selective nanoscale growth of lattice mismatched materials

Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.
Inventors:
;
Issue Date:
OSTI Identifier:
1364428
Assignee:
STC.UNM SNL-A
Patent Number(s):
9,685,324
Application Number:
14/610,254
Contract Number:
909872
Resource Relation:
Patent File Date: 2015 Jan 30
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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