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Title: Method of making photovoltaic cell

Abstract

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1364427
Patent Number(s):
9,685,580
Application Number:
15/265,374
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Sep 14
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Cruz-Campa, Jose Luis, Zhou, Xiaowang, and Zubia, David. Method of making photovoltaic cell. United States: N. p., 2017. Web.
Cruz-Campa, Jose Luis, Zhou, Xiaowang, & Zubia, David. Method of making photovoltaic cell. United States.
Cruz-Campa, Jose Luis, Zhou, Xiaowang, and Zubia, David. Tue . "Method of making photovoltaic cell". United States. https://www.osti.gov/servlets/purl/1364427.
@article{osti_1364427,
title = {Method of making photovoltaic cell},
author = {Cruz-Campa, Jose Luis and Zhou, Xiaowang and Zubia, David},
abstractNote = {A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {6}
}

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Works referenced in this record:

Back-contact solar cells: a review
journal, January 2006

  • Kerschaver, Emmanuel Van; Beaucarne, Guy
  • Progress in Photovoltaics: Research and Applications, Vol. 14, Issue 2, p. 107-123
  • DOI: 10.1002/pip.657

Two- and three-dimensional folding of thin film single-crystalline silicon for photovoltaic power applications
journal, November 2009

  • Guo, X.; Li, H.; Yeop Ahn, B.
  • Proceedings of the National Academy of Sciences, Vol. 106, Issue 48, p. 20149-20154
  • DOI: 10.1073/pnas.0907390106