Method for fabrication of ceramic dielectric films on copper foils

Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

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Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

Inventors:: Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

Issue Date:: 2017-06-14

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1363751

Patent Number(s):: 9679705

Application Number:: 14/631,536

Assignee:: UCHICAGO ARGONNE, LLC

Patent Classifications (CPCs):: C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof
C04B2235/3232 - Titanium oxides or titanates, e.g. rutile or anatase
C04B2235/3244 - Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
C04B2235/3296 - Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
C04B2235/441 - Alkoxides, e.g. methoxide, tert-butoxide
C04B2235/443 - Nitrates or nitrites
C04B2235/449 - Organic acids, e.g. EDTA, citrate, acetate, oxalate
C04B2235/6562 - Heating rate
C04B2235/6565 - Cooling rate
C04B2235/6584 - at an oxygen percentage below that of air
C04B2235/768 - Perovskite structure ABO3
C04B35/491 - based on lead zirconates and lead titanates {, e.g. PZT}
C04B35/624 - Sol-gel processing

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1204 - {inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds}
C23C18/1208 - {Oxides, e.g. ceramics}
C23C18/1225 - {Deposition of multilayers of inorganic material}
C23C18/1241 - {Metallic substrates}
C23C18/1254 - {Sol or sol-gel processing}
C23C18/1283 - {Control of temperature, e.g. gradual temperature increase, modulation of temperature}
C23C18/1295 - {with after-treatment of the deposited inorganic material}
C23C26/00 - Coating not provided for in groups C23C2/00 - C23C24/00

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G13/04 - Drying
H01G4/1218 - {based on titanium oxides or titanates
H01G4/1245 - {containing also titanates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/24355 - Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Y10T428/266 - of base or substrate

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Feb 25

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States: N. p., 2017. 
        Web.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., & Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Wed .  
        "Method for fabrication of ceramic dielectric films on copper foils".  United States.  https://www.osti.gov/servlets/purl/1363751.

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@article{osti_1363751,

  title        = {Method for fabrication of ceramic dielectric films on copper foils},

  author       = {Ma, Beihai and Narayanan, Manoj and Dorris, Stephen E. and Balachandran, Uthamalingam},

  abstractNote = {The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {6}

}

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Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

Citation Formats

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Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits patent, January 2002

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PZT and PLZT thin films on Cu substrates for dielectric and piezoelectric applications: Effect of processing atmosphere and film strain journal, January 2005

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications journal, February 2005

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Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O 3 thin‐film capacitors with La‐Sr‐Co‐O electrodes journal, March 1995

Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates journal, April 2005

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces journal, January 2008

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils journal, January 2008

Solution chemistry effects in Pb(Zr, Ti)O3 thin film processing journal, November 1992

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Chemical solution deposition of electronic oxide films journal, May 2004

Effect of local oxygen activity on Ni–BaTiO3 interfacial reactions journal, August 2006

Photovoltaic device and manufacturing method of the same
patent, September 1997

Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
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Lead zirconate titanate dielectric thin film composites on metallic foils
patent, September 2003

Substrate structure for growth of highly oriented and/or epitaxial layers thereon
patent, July 2005

Thin film dielectrics for capacitors and methods of making thereof
patent, April 2006

Structures including perovskite dielectric layers and variable oxygen concentration gradient layers
patent, July 2006

Amorphous dielectric capacitors on silicon
patent-application, August 2001

Multi-layer conductor-dielectric oxide structure
patent-application, June 2003

Composition for forming piezoelectric film, manufacturing method of piezoelectric film, piezoelectric element and ink jet recording head
patent-application, July 2004

Light control unit
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LARGE AREA THIN FILM CAPACITORS ON METAL FOILS AND METHODS OF MANUFACTURING SAME
patent-application, September 2009

PZT and PLZT thin films on Cu substrates for dielectric and piezoelectric applications: Effect of processing atmosphere and film strain
journal, January 2005

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications
journal, February 2005

Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil
journal, June 2006

Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O ₃ thin‐film capacitors with La‐Sr‐Co‐O electrodes
journal, March 1995

Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates
journal, April 2005

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces
journal, January 2008

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
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Solution chemistry effects in Pb(Zr, Ti)O3 thin film processing
journal, November 1992

Sol-gel processing of PZT thin films: A review of the state-of-the-art and process optimization strategies
journal, February 1995

Chemical solution deposition of electronic oxide films
journal, May 2004

Effect of local oxygen activity on Ni–BaTiO3 interfacial reactions
journal, August 2006