Method for fabrication of ceramic dielectric films on copper foils

Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

Inventors:: Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

Issue Date:: 2017-06-14

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1363751

Patent Number(s):: 9679705

Application Number:: 14/631,536

Assignee:: UCHICAGO ARGONNE, LLC

Patent Classifications (CPCs):: C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/6565 - Cooling rate
C04B2235/3244 - Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
C04B2235/443 - Nitrates or nitrites

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G13/04 - Drying

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/3296 - Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1208 - {Oxides, e.g. ceramics}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/624 - Sol-gel processing

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/266 - of base or substrate

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1204 - {inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/449 - Organic acids, e.g. EDTA, citrate, acetate, oxalate
C04B2235/441 - Alkoxides, e.g. methoxide, tert-butoxide

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G4/1218 - {based on titanium oxides or titanates

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/24355 - Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/6562 - Heating rate
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof
C04B2235/768 - Perovskite structure ABO3

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1254 - {Sol or sol-gel processing}
C23C26/00 - Coating not provided for in groups C23C2/00 - C23C24/00

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G4/1245 - {containing also titanates}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1283 - {Control of temperature, e.g. gradual temperature increase, modulation of temperature}
C23C18/1241 - {Metallic substrates}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/6584 - at an oxygen percentage below that of air

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1225 - {Deposition of multilayers of inorganic material}

C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B35/491 - based on lead zirconates and lead titanates {, e.g. PZT}
C04B2235/3232 - Titanium oxides or titanates, e.g. rutile or anatase

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1295 - {with after-treatment of the deposited inorganic material}

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Feb 25

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States: N. p., 2017. 
        Web.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., & Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Wed .  
        "Method for fabrication of ceramic dielectric films on copper foils".  United States.  https://www.osti.gov/servlets/purl/1363751.

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@article{osti_1363751,

  title        = {Method for fabrication of ceramic dielectric films on copper foils},

  author       = {Ma, Beihai and Narayanan, Manoj and Dorris, Stephen E. and Balachandran, Uthamalingam},

  abstractNote = {The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {6}

}

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Works referenced in this record:

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications
journal, February 2005

Kingon, Angus I.; Srinivasan, Sudarsan
Nature Materials, Vol. 4, Issue 3, p. 233-237
https://doi.org/10.1038/nmat1334

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces
journal, January 2008

Losego, Mark D.; Ihlefeld, Jon F.; Maria, Jon-Paul
Chemistry of Materials, Vol. 20, Issue 1, p. 303-307
https://doi.org/10.1021/cm070999q

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
journal, January 2008

Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj
Journal of Electroceramics, Vol. 22, Issue 4, p. 383-389
https://doi.org/10.1007/s10832-007-9410-1

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Similar Records

Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

Citation Formats

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications journal, February 2005

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces journal, January 2008

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils journal, January 2008

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journal, February 2005

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces
journal, January 2008

Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
journal, January 2008