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Title: Wafer scale oblique angle plasma etching

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.
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Issue Date:
OSTI Identifier:
Sandia Corporation SNL-A
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2014 Sep 17
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

Oblique-Directional Plasma Etching of Si Using a Faraday Cage
journal, January 2009
  • Lee, Jin-Kwan; Lee, Seung-Haeng; Min, Jae-Ho
  • Journal of The Electrochemical Society, Vol. 156, Issue 7, p. D222-D225
  • DOI: 10.1149/1.3122623

Free-Standing Mechanical and Photonic Nanostructures in Single-Crystal Diamond
journal, February 2012
  • Burek, Michael J.; de Leon, Nathalie P.; Shields, Brendan J.
  • Nano Letters, Vol. 12, Issue 12, p. 6084-6089
  • DOI: 10.1021/nl302541e