Capacitance reduction for pillar structured devices
Abstract
In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1356227
- Patent Number(s):
- 9645262
- Application Number:
- 14/555,463
- Assignee:
- Lawrence Livermore National Security, LLC
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-07NA27344
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Nov 26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Shao, Qinghui, Conway, Adam, Nikolic, Rebecca J., Voss, Lars, Bhat, Ishwara B., and Harrison, Sara E.. Capacitance reduction for pillar structured devices. United States: N. p., 2017.
Web.
Shao, Qinghui, Conway, Adam, Nikolic, Rebecca J., Voss, Lars, Bhat, Ishwara B., & Harrison, Sara E.. Capacitance reduction for pillar structured devices. United States.
Shao, Qinghui, Conway, Adam, Nikolic, Rebecca J., Voss, Lars, Bhat, Ishwara B., and Harrison, Sara E.. Tue .
"Capacitance reduction for pillar structured devices". United States. https://www.osti.gov/servlets/purl/1356227.
@article{osti_1356227,
title = {Capacitance reduction for pillar structured devices},
author = {Shao, Qinghui and Conway, Adam and Nikolic, Rebecca J. and Voss, Lars and Bhat, Ishwara B. and Harrison, Sara E.},
abstractNote = {In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {5}
}
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