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Title: Capacitance reduction for pillar structured devices

In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cavity regions being defined between the pillars; and a second layer deposited on a periphery of the pillars thereby forming coated pillars, the second layer being substantially absent on the planar portion of the intrinsic layer between the coated pillars. The second layer includes an n+ dopant when the first layer includes a p+ dopant. The second layer includes a p+ dopant when the first layer includes an n+ dopant. The apparatus includes a neutron sensitive material deposited between the coated pillars and above the planar portion of the intrinsic layer. In additional embodiments, an upper portion of each of the pillars includes a same type of dopant as the second layer.
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Issue Date:
OSTI Identifier:
Lawrence Livermore National Security, LLC LLNL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2014 Nov 26
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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