Method of making dielectric capacitors with increased dielectric breakdown strength
Abstract
The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1356201
- Patent Number(s):
- 9646766
- Application Number:
- 13/523,335
- Assignee:
- UChicago Argonne, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Jun 14
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Ma, Beihai, Balachandran, Uthamalingam, and Liu, Shanshan. Method of making dielectric capacitors with increased dielectric breakdown strength. United States: N. p., 2017.
Web.
Ma, Beihai, Balachandran, Uthamalingam, & Liu, Shanshan. Method of making dielectric capacitors with increased dielectric breakdown strength. United States.
Ma, Beihai, Balachandran, Uthamalingam, and Liu, Shanshan. Tue .
"Method of making dielectric capacitors with increased dielectric breakdown strength". United States. https://www.osti.gov/servlets/purl/1356201.
@article{osti_1356201,
title = {Method of making dielectric capacitors with increased dielectric breakdown strength},
author = {Ma, Beihai and Balachandran, Uthamalingam and Liu, Shanshan},
abstractNote = {The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {5}
}
Works referenced in this record:
Linearized ferroelectric capacitor
patent, January 1994
- Brennan, Ciaran J.
- US Patent Document 5,280,407
Multilayer capacitor including a dielectric breakdown prevention layer
patent, September 1998
- Kuroda, Yoichi; Honda, Yukio; Osuga, Kazumi
- US Patent Document 5,812,363
Multilayer ceramic capacitor
patent, November 1998
- Suzuki, Takashi; Abe, Satoru
- US Patent Document 5,835,338
Method of dry etching PZT capacitor stack to form high-density ferroelectric memory devices
patent, December 2002
- Xing, Guoqiang
- US Patent Document 6,492,222
Method of fabricating ferroelectric memory device
patent, June 2004
- Kim, Hyun-Ho
- US Patent Document 6,753,193
Capacitor having improved electrodes
patent, December 2005
- Hunt, Andrew Tye; Allen, Mark G.; Kiesling, David
- US Patent Document 6,975,500
High performance capacitor with high dielectric constant material
patent, September 2008
- Dowgiallo, Jr., Edward J.
- US Patent Document 7,428,137
Laminated ceramic capacitor
patent, October 2008
- Oguni, Toshimi; Matsumoto, Hiroyuki
- US Patent Document 7,436,650
Ferroelectric capacitor memory device fabrication method
patent-application, April 2004
- Lung, Hsiang-Lan
- US Patent Application 10/270997; 20040072407
Thin film capacity element composition, high-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, electronic circuit and electronic apparatus
patent-application, May 2006
- Sakashita, Yukio; Funakubo, Hiroshi
- US Patent Application 10/547134; 20060098385
Method for non-volatile memory fabrication
patent-application, December 2006
- Tseng, Tseung-Yuen; Liu, Chih-Yi; Chuang, Chun-Chieh
- US Patent Application 11/293279; 20060286762
Microcontact printed thin film capacitors
patent-application, July 2007
- Trolier-McKinstry, Susan; Randall, Clive; Nagata, Hajime
- US Patent Application 11/262524; 20070172592
Dielectric element and method for manufacturing same
patent-application, October 2007
- Katoh, Tomohiko; Horino, Kenji
- US Patent Application 11/602981; 20070236866
Capacitor and multi-layer board embedding the capacitor
patent-application, July 2008
- Sohn, Seung Hyun; Chung, Yul Kyo; Lee, Seung Eun
- US Patent Application 11/979770; 20080158777
Film Capacitor
patent-application, April 2010
- Tan, Daniel Qi; Irwin, Patricia Chapman; Cao, Yang
- US Patent Application 12/241136; 20100079926
Laminar Structure on a Semiconductor Substrate
patent-application, April 2010
- Ishida, Makoto; Sawada, Kazuaki; Akai, Daisuke
- US Patent Application 12/450182; 20100096666
Contact Method To Allow Benign Failure In Ceramic Capacitor Having Self-Clearing Feature
patent-application, November 2010
- Myers, John; Taylor, Ralph
- US Patent Application 12/469087; 20100296223
Shapeable Short-Resistant Capacitor
patent-application, January 2011
- Taylor, Ralph; Myers, John; Baney, William
- US Patent Application 12/498025; 20110002081
Thin-Film Capacitor And Manufacturing Method Thereof
patent-application, March 2011
- Oikawa, Yasunobu; Yano, Yoshihiko
- US Patent Application 12/876648; 20110075317
Piezoelectric Element And Method For Manufacturing The Same
patent-application, May 2011
- Noda, Toshinari; Komaki, Kazuki
- US Patent Application 12/994188; 20110101828
High dielectric constant of SrTiO3 thin films prepared by chemical process
journal, October 2000
- Pontes, F. M.; Lee, E. J. H.; Leite, E. R.
- Journal of Materials Science, Vol. 35, Issue 19, p. 4783-4787
Voltage and frequency dependent dielectric properties of BST-0.5 thin films on alumina substrates
journal, June 2003
- Delprat, S.; Ouaddari, M.; Vidal, F.
- IEEE Microwave and Wireless Components Letters, Vol. 13, Issue 6, p. 211-213
Dielectric properties of PLZT film-on-foil capacitors
journal, July 2008
- Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj
- Materials Letters, Vol. 62, Issue 20, p. 3573-3575
Development of PLZT dielectrics on base metal foils for embedded capacitors
journal, January 2010
- Balachandran, U.; Kwon, D. K.; Narayanan, M.
- Journal of the European Ceramic Society, Vol. 30, Issue 2, p. 365-368
Contribution to the understanding of the relationship between mechanical and dielectric strengths of Alumina
journal, November 2010
- Malec, David; Bley, Vincent; Talbi, Fatiha
- Journal of the European Ceramic Society, Vol. 30, Issue 15, p. 3117-3123
Models for breakdown-resistant dielectric and ferroelectric ceramics
journal, July 1993
- Suo, Z.
- Journal of the Mechanics and Physics of Solids, Vol. 41, Issue 7, p. 1155-1176
Phase transition and high dielectric constant of bulk dense nanograin barium titanate ceramics
journal, October 2006
- Wang, Xiaohui; Deng, Xiangyun; Wen, Hai
- Applied Physics Letters, Vol. 89, Issue 16, 162902
Ferroelectric Ceramics: History and Technology
journal, April 1999
- Haertling, Gene H.
- Journal of the American Ceramic Society, Vol. 82, Issue 4, p. 797-818
In-plane dielectric properties of epitaxial 0.65Pb(Mg1∕3Nb2∕3)O3−0.35PbTiO3 thin films in a very wide frequency range
journal, August 2004
- Wang, Y.; Cheng, Y. L.; Cheng, K. C.
- Applied Physics Letters, Vol. 85, Issue 9, p. 1580-1582
CaCu3Ti4O12: One-step internal barrier layer capacitor
journal, March 2002
- Sinclair, Derek C.; Adams, Timothy B.; Morrison, Finlay D.
- Applied Physics Letters, Vol. 80, Issue 12, p. 2153-2155