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Title: Method of making dielectric capacitors with increased dielectric breakdown strength

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.
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Issue Date:
OSTI Identifier:
UChicago Argonne, LLC ANL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2012 Jun 14
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
Country of Publication:
United States

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