Global to push GA events into
skip to main content

Title: Defect reduction in seeded aluminum nitride crystal growth

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
; ; ;
Issue Date:
OSTI Identifier:
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2014 Aug 13
Research Org:
Chicago Operations Office, Argonne, IL (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
journal, November 2003
  • Chitnis, A.; Adivarahan, V.; Zhang, J. P.
  • physica status solidi (a), Vol. 200, Issue 1, p. 99-101
  • DOI: 10.1002/pssa.200303420

Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
journal, January 2002

Electrical conductivity of materials from mixed aluminum and silicon nitrides
journal, November 1970
  • Gorbatov, A. G.; Kamyshov, V. M.
  • Soviet Powder Metallurgy and Metal Ceramics, Vol. 9, Issue 11, p. 917-920
  • DOI: 10.1007/BF00803792

The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
journal, January 1970
  • Karel, F.; Pastrňák, J.
  • Czechoslovak Journal of Physics B, Vol. 20, Issue 1, p. 46-55
  • DOI: 10.1007/BF01698106

Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
journal, November 1999

A Global Growth Rate Model for Aluminum Nitride Sublimation
journal, January 2002
  • Liu, Lianghong; Edgar, J. H.
  • Journal of The Electrochemical Society, Vol. 149, Issue 1, p. G12-G15
  • DOI: 10.1149/1.1421349

Characterization of Aluminum Nitride Crystals Grown by Sublimation
journal, December 2001

Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1)
journal, December 2003
  • Nakanishi, Y.; Wakahara, A.; Okada, H.
  • physica status solidi (c), Vol. 0, Issue 7, p. 2623-2626
  • DOI: 10.1002/pssc.200303440

Recent Developments in Nitride Chemistry
journal, October 1998
  • Niewa, R.; DiSalvo, F. J.
  • Chemistry of Materials, Vol. 10, Issue 10, p. 2733-2752
  • DOI: 10.1021/cm980137c

Fabrication of native, single-crystal AlN substrates
journal, December 2003
  • Schowalter, L. J.; Slack, G. A.; Whitlock, J. B.
  • physica status solidi (c), Vol. 0, Issue 7, p. 1997-2000
  • DOI: 10.1002/pssc.200303462

Degradation in AlGaInN lasers
journal, December 2003
  • Takeya, Motonobu; Mizuno, Takashi; Sasaki, Tomomi
  • physica status solidi (c), Vol. 0, Issue 7, p. 2292-2295
  • DOI: 10.1002/pssc.200303324

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006
  • Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
  • Nature, Vol. 441, Issue 7091, p. 325-328
  • DOI: 10.1038/nature04760

Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002
  • Tavernier, P. R.; Margalith, T.; Coldren, L. A.
  • Electrochemical and Solid-State Letters, Vol. 5, Issue 8, p. G61-G64
  • DOI: 10.1149/1.1485807

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001

Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
journal, May 2003
  • Venugopal, R.; Wan, J.; Melloch, M.
  • Journal of Electronic Materials, Vol. 32, Issue 5, p. 371-374
  • DOI: 10.1007/s11664-003-0160-9

Preparation of GaN Single Crystals Using a Na Flux
journal, February 1997
  • Yamane, Hisanori; Shimada, Masahiko; Clarke, Simon J.
  • Chemistry of Materials, Vol. 9, Issue 2, p. 413-416
  • DOI: 10.1021/cm960494s

Point defect content and optical transitions in bulk aluminum nitride crystals
journal, June 2009
  • Bickermann, Matthias; Epelbaum, Boris M.; Filip, Octavian
  • physica status solidi (b), Vol. 246, Issue 6, p. 1181-1183
  • DOI: 10.1002/pssb.200880753

Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode
journal, February 2012
  • Akiba, Masahiro; Hirayama, Hideki; Tomita, Yuji
  • physica status solidi (c), Vol. 9, Issue 3-4, p. 806-809
  • DOI: 10.1002/pssc.201100370

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN
journal, November 2003
  • Iwaya, M.; Takanami, S.; Miyazaki, A.
  • physica status solidi (a), Vol. 200, Issue 1, p. 110-113
  • DOI: 10.1002/pssa.200303504

Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
journal, May 2008
  • Maier, M.; Köhler, K.; Kunzer, M.
  • physica status solidi (c), Vol. 5, Issue 6, p. 2133-2135
  • DOI: 10.1002/pssc.200778475

340–350 nm GaN-free UV-LEDs
journal, November 2003
  • Nishida, T.; Ban, T.; Kobayashi, N.
  • physica status solidi (a), Vol. 200, Issue 1, p. 106-109
  • DOI: 10.1002/pssa.200303411

III-nitride blue and UV photonic-crystal light-emitting diodes
conference, October 2004
  • Shakya, Jagat B.; Kim, Kyoung Hoon; Oder, Tom N.
  • Fourth International Conference on Solid State Lighting, Vol. 5530
  • DOI: 10.1117/12.565632