skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:
; ; ;
Issue Date:
Research Org.:
CRYSTAL IS, INC., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1351836
Patent Number(s):
9624601
Application Number:
14/458,861
Assignee:
CRYSTAL IS, INC.
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
70NANB4H3051
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 13
Country of Publication:
United States
Language:
English

Citation Formats

Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Stack, Glen A.. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2017. Web.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., & Stack, Glen A.. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Stack, Glen A.. Tue . "Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1351836.
@article{osti_1351836,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Morgan, Kenneth E. and Schowalter, Leo J. and Stack, Glen A.},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {4}
}

Patent:

Save / Share:

Works referenced in this record:

Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
journal, December 2004


Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
journal, August 2002


Sublimation growth and characterization of bulk aluminum nitride single crystals
journal, August 1997


Characterization of bulk AlN with low oxygen content
journal, September 2004


Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
journal, November 2003


On the preparation, optical properties and electrical behaviour of aluminium nitride
journal, April 1967


Phase equilibria pertinent to the growth of cubic boron nitride
journal, May 1972


The synthesis of aluminum nitride single crystals
journal, March 1974


Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
journal, January 2002


Electrical conductivity of materials from mixed aluminum and silicon nitrides
journal, November 1970


Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
journal, May 2005


n-type AlN layer by Si ion implantation
journal, May 2006


The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
journal, January 1970


Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere
journal, November 1999


A Global Growth Rate Model for Aluminum Nitride Sublimation
journal, January 2002


Characterization of Aluminum Nitride Crystals Grown by Sublimation
journal, December 2001


Defects in epitaxial multilayers
journal, December 1974


Sublimation growth of AlN bulk crystals in Ta crucibles
journal, July 2005


Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1)
journal, December 2003


Recent Developments in Nitride Chemistry
journal, October 1998


Mass transfer in AlN crystal growth at high temperatures
journal, March 2004


Determination of the critical layer thickness in the InGaN/GaN heterostructures
journal, November 1999


Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN
journal, December 2002


X-ray characterization of bulk AIN single crystals grown by the sublimation technique
journal, March 2003


Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals
journal, May 2002


Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals
journal, January 2002


Report on the growth of bulk aluminum nitride and subsequent substrate preparation
journal, October 2001


Growth of AlN bulk crystals from the vapor phase
journal, January 2001


Seeded growth of AlN bulk single crystals by sublimation
journal, June 2002


Fabrication of native, single-crystal AlN substrates
journal, December 2003


On mechanisms of sublimation growth of AlN bulk crystals
journal, April 2000


Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
journal, January 2005


Physical vapor transport growth of large AlN crystals
journal, March 2003


Growth of high purity AlN crystals
journal, July 1976


Properties of Crucible Materials for Bulk Growth of AlN
journal, January 2003


Some effects of oxygen impurities on AlN and GaN
journal, December 2002


AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
journal, July 1999


Degradation in AlGaInN lasers
journal, December 2003


An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006


Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)
journal, August 2002


Chemical Mechanical Polishing of Gallium Nitride
journal, January 2002


Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
journal, November 2001


Solid-state lighting
journal, May 2004


Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition
journal, May 2003


Synthesis of the Cubic Form of Boron Nitride
journal, March 1961


Preparation of GaN Single Crystals Using a Na Flux
journal, February 1997


Growth of nitride crystals, BN, AlN and GaN by using a Na flux
journal, April 2000


DX -behavior of Si in AlN
journal, June 2000


Seeded growth of AlN single crystals by physical vapor transport
journal, January 2006


Point defect content and optical transitions in bulk aluminum nitride crystals
journal, June 2009


Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
journal, December 2002


Natural growth habit of bulk AlN crystals
journal, May 2004


Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode
journal, February 2012


Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes
journal, August 2006


Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
journal, April 2012


Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction
journal, July 2009


Optimizing textured structures possessing both optical gradient and diffraction properties to increase the extraction efficiency of light-emitting diodes
journal, October 2012


Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN
journal, November 2003


Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate
journal, May 2008


340–350 nm GaN-free UV-LEDs
journal, November 2003


AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
journal, February 2004


Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns
journal, July 2011


Very low dislocation density AlN substrates for device applications
conference, February 2006


III-nitride blue and UV photonic-crystal light-emitting diodes
conference, October 2004


Light Extraction Methods in Light-Emitting Diodes
conference, January 2011


Enhancement of light extraction from light emitting diodes
journal, February 2011