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Title: Integrated Avalanche Photodiode arrays

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
Issue Date:
OSTI Identifier:
LightSpin Technologies, Inc. CHO
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 May 21
Research Org:
LightSpin Technologies, Inc. Endicott, NY (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

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