Integrated Avalanche Photodiode arrays
Abstract
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
- Inventors:
- Issue Date:
- Research Org.:
- LightSpin Technologies, Inc. Endicott, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1351819
- Patent Number(s):
- 9627569
- Application Number:
- 14/718,352
- Assignee:
- LightSpin Technologies, Inc.
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- SC0009538
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 May 21
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE
Citation Formats
Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States: N. p., 2017.
Web.
Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States.
Harmon, Eric S. Tue .
"Integrated Avalanche Photodiode arrays". United States. https://www.osti.gov/servlets/purl/1351819.
@article{osti_1351819,
title = {Integrated Avalanche Photodiode arrays},
author = {Harmon, Eric S.},
abstractNote = {The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {4}
}
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Works referenced in this record:
Photo detector input circuit
patent, November 1979
- Temes, Gabor C.; Cheung, Derek T.
- US Patent Document 4,173,723
Process for producing an injection laser and laser obtained by this process
patent, July 1982
- Landreau, Jean; Delpech, Philippe; Bouley, Jean-Claude
- US Patent Document 4,341,570
Method of making avalanche photodiodes
patent, September 1983
- Bottka, Nicholas; Hills, Marian E.
- US Patent Document 4,403,397
Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
patent, September 1985
- Anthony, Philip J.; Hartman, Robert L.; Koszi, Louis A.
- US Patent Document 4,539,743
Avalanche photodiode array integrated with etched silicon divider
patent, April 1993
- Green, Samuel I.
- US Patent Document 5,204,520
Planar buried quantum well photodetector
patent, June 1993
- Hui, Sanghee Park; Pei, Shin-Shem
- US Patent Document 5,223,704
Multi-capacitance photodiode image sensor
patent, July 1994
- Mihara, Akira
- US Patent Document 5,329,112
Image sensor with transparent capacitive regions
patent, September 1994
- Van Berkel, Cornelis; Bird, Neil C.; Davies, Oliver S.
- US Patent Document 5,349,174
Mesa-structure avalanche photodiode having a buried epitaxial junction
patent, February 1999
- Hasnain, Ghulam; Hollenhorst, James N.; Su, Chung-Yi
- US Patent Document 5,866,936
High voltage silicon carbide semiconductor device with bended edge
patent, June 1999
- Hermansson, Willy; Ramberg, Lennart; Sigurd, Dag
- US Patent Document 5,914,499
Photodetector with isolation implant region for reduced device capacitance and increased bandwidth
patent, June 2004
- Brinkmann, David; Lindemann, John Hart; Scott, Jeffrey W.
- US Patent Document 6,753,214
LED fabrication via ion implant isolation
patent, May 2011
- Slater, Jr., David B.; Edmond, John Adam; Suvorov, Alexander
- US Patent Document 7,943,406
Systems and methods for reducing crosstalk in an avalanche photodiode detector array
patent, October 2012
- Yuan, Ping; McDonald, Paul A.
- US Patent Document 8,279,411
Silicon photomultiplier and readout method
patent, May 2015
- Pavlov, Nikolai
- US Patent Document 9,029,772
Solid state microchannel plate photodetector
patent-application, December 2004
- Harmon, Eric S.; Salzman, David B.
- US Patent Application 10/837175; 20040245592
A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction
journal, January 1992
- Liu, Y.; Forrest, S. R.; Hladky, J.
- Journal of Lightwave Technology, Vol. 10, Issue 2, p. 182-193
Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
conference, January 2006
- Daliento, S.; Mele, L.; Spirito, P.
Ultrafast trapping times in ion implanted InP
journal, September 2002
- Carmody, C.; Boudinov, H.; Tan, H. H.
- Journal of Applied Physics, Vol. 92, Issue 5, p. 2420-2423
Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature
journal, June 2003
- Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C.
- Journal of Applied Physics, Vol. 93, Issue 11, p. 9123-9129
Electrical isolation in GaAs by light ion irradiation: The role of antisite defects
journal, January 1996
- de Souza, J. P.; Danilov, I.; Boudinov, H.
- Applied Physics Letters, Vol. 68, Issue 4, p. 535-537
Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions
journal, January 1997
- de Souza, J. P.; Danilov, I.; Boudinov, H.
- Journal of Applied Physics, Vol. 81, Issue 2, p. 650-655
Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures
journal, April 2002
- Too, P.; Ahmed, S.; Gwilliam, R.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 188, Issue 1-4, p. 205-209
Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K
journal, January 2013
- Huang, Chiao-Ti; Li, Jiun-Yun; Sturm, James C.
- IEEE Electron Device Letters, Vol. 34, Issue 1, p. 21-23
Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
journal, May 2012
- Wendler, E.; Wendler, L.
- Applied Physics Letters, Vol. 100, Issue 19, Article No. 192108
GaAs photodetectors prepared by high-energy and high-dose nitrogen implantation
journal, August 2006
- Mikulics, Martin; Marso, Michel; Mantl, Siegfried
- Applied Physics Letters, Vol. 89, Issue 9, Article No. 091103
Ion implantation doping and isolation of In0.5Ga0.5P
journal, September 1991
- Pearton, S. J.; Kuo, J. M.; Ren, F.
- Applied Physics Letters, Vol. 59, Issue 12, p. 1467-1469
Electrical isolation of n-type GaAs devices by MeV/MeV-like implantation of various ion species
conference, January 2002
- Ahmed, S.; Sealy, B. J.; Gwilliam, R.
Implant isolation in GaAs device technology: Effect of substrate temperature
journal, April 2002
- Ahmed, S.; Gwilliam, R.; Sealy, B. J.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 188, Issue 1-4, p. 196-200
Proton isolated In0.2Ga0.8As/GaAs strainedâlayer superlattice avalanche photodiode
journal, April 1986
- Bulman, G. E.; Myers, D. R.; Zipperian, T. E.
- Applied Physics Letters, Vol. 48, Issue 15, p. 1015-1017
Electrical isolation of InGaP by proton and helium ion irradiation
journal, October 2002
- Danilov, I.; de Souza, J. P.; Boudinov, H.
- Journal of Applied Physics, Vol. 92, Issue 8, p. 4261-4265
The digital silicon photomultiplier — System architecture and performance evaluation
conference, October 2010
- Frach, Thomas; Prescher, Gordian; Degenhardt, Carsten
Ion implantation for isolation of III-V semiconductors
journal, January 1990
- Pearton, S. J.
- Materials Science Reports, Vol. 4, Issue 6, p. 313-363
Planar InAs photodiodes fabricated using He ion implantation
journal, January 2012
- Sandall, Ian; Tan, Chee Hing; Smith, Andrew
- Optics Express, Vol. 20, Issue 8, p. 8575-8583
Simulation of Silicon Photomultiplier Signals
journal, December 2009
- Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan
- IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3726-3733
Guard-Ring Structures for Silicon Photomultipliers
journal, January 2010
- Sul, Woo-Suk; Oh, Jung-Hun; Lee, Chae-Hun
- IEEE Electron Device Letters, Vol. 31, Issue 1, p. 41-43
Electronics for single photon avalanche diode arrays
journal, October 2007
- Tisa, S.; Zappa, F.; Tosi, A.
- Sensors and Actuators A: Physical, Vol. 140, Issue 1, p. 113-122
Proton-Implantation-Isolated 4H-SiC Avalanche Photodiodes
journal, December 2009
- Zhou, Qiugui; Liu, Han-Din; McIntosh, Dion C.
- IEEE Photonics Technology Letters, Vol. 21, Issue 23, p. 1734-1736