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Title: Integrated Avalanche Photodiode arrays

Abstract

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Inventors:
Issue Date:
Research Org.:
LightSpin Technologies, Inc. Endicott, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1351819
Patent Number(s):
9627569
Application Number:
14/718,352
Assignee:
LightSpin Technologies, Inc.
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
DOE Contract Number:  
SC0009538
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 May 21
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE

Citation Formats

Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States: N. p., 2017. Web.
Harmon, Eric S. Integrated Avalanche Photodiode arrays. United States.
Harmon, Eric S. Tue . "Integrated Avalanche Photodiode arrays". United States. https://www.osti.gov/servlets/purl/1351819.
@article{osti_1351819,
title = {Integrated Avalanche Photodiode arrays},
author = {Harmon, Eric S.},
abstractNote = {The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {4}
}

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Works referenced in this record:

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