Method for fabrication of ceramic dielectric films on copper foils

Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

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Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

Inventors:: Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

Issue Date:: 2015-03-10

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1349887

Patent Number(s):: 8974856

Application Number:: 12/786,940

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C04B2235/3227 - Lanthanum oxide or oxide-forming salts thereof
C04B2235/3232 - Titanium oxides or titanates, e.g. rutile or anatase
C04B2235/3244 - Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
C04B2235/3296 - Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
C04B2235/441 - Alkoxides, e.g. methoxide, tert-butoxide
C04B2235/443 - Nitrates or nitrites
C04B2235/449 - Organic acids, e.g. EDTA, citrate, acetate, oxalate
C04B2235/6562 - Heating rate
C04B2235/6565 - Cooling rate
C04B2235/6584 - at an oxygen percentage below that of air
C04B2235/768 - Perovskite structure ABO3
C04B35/491 - based on lead zirconates and lead titanates {, e.g. PZT}
C04B35/624 - Sol-gel processing

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C18/1204 - {inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds}
C23C18/1208 - {Oxides, e.g. ceramics}
C23C18/1225 - {Deposition of multilayers of inorganic material}
C23C18/1241 - {Metallic substrates}
C23C18/1254 - {Sol or sol-gel processing}
C23C18/1283 - {Control of temperature, e.g. gradual temperature increase, modulation of temperature}
C23C18/1295 - {with after-treatment of the deposited inorganic material}
C23C26/00 - Coating not provided for in groups C23C2/00 - C23C24/00

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G13/04 - Drying
H01G4/1218 - {based on titanium oxides or titanates
H01G4/1245 - {containing also titanates}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/24355 - Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
Y10T428/266 - of base or substrate

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2010 May 25

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States: N. p., 2015. 
        Web.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., & Balachandran, Uthamalingam. Method for fabrication of ceramic dielectric films on copper foils.  United States.

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                    Ma, Beihai, Narayanan, Manoj, Dorris, Stephen E., and Balachandran, Uthamalingam. Tue .  
        "Method for fabrication of ceramic dielectric films on copper foils".  United States.  https://www.osti.gov/servlets/purl/1349887.

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@article{osti_1349887,

  title        = {Method for fabrication of ceramic dielectric films on copper foils},

  author       = {Ma, Beihai and Narayanan, Manoj and Dorris, Stephen E. and Balachandran, Uthamalingam},

  abstractNote = {The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2015},

  month        = {3}

}

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Similar Records

Title: Method for fabrication of ceramic dielectric films on copper foils

Abstract

Citation Formats

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Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits patent, January 2002

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Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates journal, April 2005

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Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil journal, June 2006

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Effect of local oxygen activity on Ni–BaTiO3 interfacial reactions journal, August 2006

Sol-gel processing of PZT thin films: A review of the state-of-the-art and process optimization strategies journal, February 1995

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Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils journal, January 2008

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Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
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Substrate structure for growth of highly oriented and/or epitaxial layers thereon
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Amorphous dielectric capacitors on silicon
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Composition for forming piezoelectric film, manufacturing method of piezoelectric film, piezoelectric element and ink jet recording head
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Ferroelectric response from lead zirconate titanate thin films prepared directly on low-resistivity copper substrates
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Chemical solution deposition of electronic oxide films
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journal, August 2006

Sol-gel processing of PZT thin films: A review of the state-of-the-art and process optimization strategies
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Imprint and oxygen deficiency in (Pb,La)(Zr,Ti)O ₃ thin‐film capacitors with La‐Sr‐Co‐O electrodes
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Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils
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