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Title: Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.
Inventors:
;
Issue Date:
OSTI Identifier:
1349675
Assignee:
Cosolidated Nuclear Security, LLC Y-12
Patent Number(s):
9,612,345
Application Number:
14/843,150
Contract Number:
NA0001942
Resource Relation:
Patent File Date: 2015 Sep 02
Research Org:
Cosolidated Nuclear Security, LLC, Reston, VA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Other works cited in this record:

p-type semiconductor, method for manufacturing the p-type semiconductor, semiconductor device, photovoltaic element, and method for manufacturing semiconductor device
patent, November 2000

Portable radiation monitor methods and apparatus
patent, November 2008

Semiconductor radiation detector
patent, March 2010

Photodiode and method of fabricating photodiode
patent, February 2013

Synthesis of a potential semiconductor neutron detector crystal LiGa(Se/Te)2: materials purity and compatibility effects
conference, September 2011

Growth and properties of LiGaX2 (X = S, Se, Te) single crystals for nonlinear optical applications in the mid-IR
journal, April 2003
  • Isaenko, L.; Yelisseyev, A.; Lobanov, S.
  • Crystal Research and Technology, Vol. 38, Issue 35, p. 379-387
  • DOI: 10.1002/crat.200310047

LiGaTe2:‚ÄČ A New Highly Nonlinear Chalcopyrite Optical Crystal for the Mid-IR
journal, June 2005
  • Isaenko, L.; Krinitsin, P.; Vedenyapin, V.
  • Crystal Growth & Design, Vol. 5, Issue 4, p. 1325-1329
  • DOI: 10.1021/cg050076c

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