Fluorinated tin oxide back contact for AZTSSe photovoltaic devices
Abstract
A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
- Inventors:
- Issue Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1348367
- Patent Number(s):
- 9608141
- Application Number:
- 14/968,252
- Assignee:
- INTERNATIONAL BUSINESS MACHINES CORPORATION
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0006334
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Dec 14
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY
Citation Formats
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States: N. p., 2017.
Web.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., & Lee, Yun Seog. Fluorinated tin oxide back contact for AZTSSe photovoltaic devices. United States.
Gershon, Talia S., Gunawan, Oki, Haight, Richard A., and Lee, Yun Seog. Tue .
"Fluorinated tin oxide back contact for AZTSSe photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1348367.
@article{osti_1348367,
title = {Fluorinated tin oxide back contact for AZTSSe photovoltaic devices},
author = {Gershon, Talia S. and Gunawan, Oki and Haight, Richard A. and Lee, Yun Seog},
abstractNote = {A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 28 00:00:00 EDT 2017},
month = {Tue Mar 28 00:00:00 EDT 2017}
}
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