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Title: Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1348367
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION DOEEE
Patent Number(s):
9,608,141
Application Number:
14/968,252
Contract Number:
EE0006334
Resource Relation:
Patent File Date: 2015 Dec 14
Research Org:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

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