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Title: Method and system for continuous atomic layer deposition

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1347583
Assignee:
UCHICAGO ARGONNE, LLC ANL
Patent Number(s):
9,598,769
Application Number:
14/339,058
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2014 Jul 23
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Works referenced in this record:

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition
journal, January 2012
  • Poodt, Paul; Cameron, David C.; Dickey, Eric
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 1, Article No. 010802
  • DOI: 10.1116/1.3670745