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Title: Method and system for continuous atomic layer deposition

A system and method for continuous atomic layer deposition. The system and method includes a housing, a moving bed which passes through the housing, a plurality of precursor gases and associated input ports and the amount of precursor gases, position of the input ports, and relative velocity of the moving bed and carrier gases enabling exhaustion of the precursor gases at available reaction sites.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1347583
Assignee:
UCHICAGO ARGONNE, LLC ANL
Patent Number(s):
9,598,769
Application Number:
14/339,058
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2014 Jul 23
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Other works cited in this record:

Deposition methods
patent, October 2002

Transient enhanced atomic layer deposition
patent, July 2011

Process for atomic layer deposition
patent, June 2012

Roll-to-roll atomic layer deposition method and system
patent, November 2012

Spatially controlled atomic layer deposition in porous materials
patent, November 2012

Systems for forming semiconductor materials by atomic layer deposition
patent, July 2013

Methods for forming semiconductor materials by atomic layer deposition using halide precursors
patent, July 2014

Method of applying atomic layer deposition coatings onto porous non-ceramic substrates
patent, October 2014

Spatial atomic layer deposition: A route towards further industrialization of atomic layer deposition
journal, January 2012
  • Poodt, Paul; Cameron, David C.; Dickey, Eric
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 1, Article No. 010802
  • DOI: 10.1116/1.3670745

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