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Title: Visible light laser voltage probing on thinned substrates

The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1347574
Assignee:
Sandia Corporation SNL-A
Patent Number(s):
9,599,667
Application Number:
14/836,713
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Aug 26
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE