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Title: Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1347438
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
Patent Number(s):
9,040,113
Application Number:
12/780,664
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2010 May 14
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Other works cited in this record:

CuInS2–TiO2 heterojunctions solar cells obtained by atomic layer deposition
journal, May 2003

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