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Title: Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

Abstract

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347438
Patent Number(s):
9,040,113
Application Number:
12/780,664
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 May 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Martinson, Alex B. F., Elam, Jeffrey W., and Pellin, Michael J. Atomic layer deposition of metal sulfide thin films using non-halogenated precursors. United States: N. p., 2015. Web.
Martinson, Alex B. F., Elam, Jeffrey W., & Pellin, Michael J. Atomic layer deposition of metal sulfide thin films using non-halogenated precursors. United States.
Martinson, Alex B. F., Elam, Jeffrey W., and Pellin, Michael J. Tue . "Atomic layer deposition of metal sulfide thin films using non-halogenated precursors". United States. https://www.osti.gov/servlets/purl/1347438.
@article{osti_1347438,
title = {Atomic layer deposition of metal sulfide thin films using non-halogenated precursors},
author = {Martinson, Alex B. F. and Elam, Jeffrey W. and Pellin, Michael J.},
abstractNote = {A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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Works referenced in this record:

Atomic layer deposition of Cu2S for future application in photovoltaics
journal, March 2009

  • Martinson, Alex B. F.; Elam, Jeffrey W.; Pellin, Michael J.
  • Applied Physics Letters, Vol. 94, Issue 12
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CuInS2–TiO2 heterojunctions solar cells obtained by atomic layer deposition
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Comparison of Cu x S Films Grown by Atomic Layer Deposition and Chemical Vapor Deposition
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Copper(I) tert -Butylthiolato Clusters as Single-Source Precursors for High-Quality Chalcocite Thin Films:  Film Growth and Microstructure Control
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Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
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