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Title: Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

Abstract

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1347438
Patent Number(s):
9040113
Application Number:
12/780,664
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 May 14
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Martinson, Alex B. F., Elam, Jeffrey W., and Pellin, Michael J. Atomic layer deposition of metal sulfide thin films using non-halogenated precursors. United States: N. p., 2015. Web.
Martinson, Alex B. F., Elam, Jeffrey W., & Pellin, Michael J. Atomic layer deposition of metal sulfide thin films using non-halogenated precursors. United States.
Martinson, Alex B. F., Elam, Jeffrey W., and Pellin, Michael J. Tue . "Atomic layer deposition of metal sulfide thin films using non-halogenated precursors". United States. https://www.osti.gov/servlets/purl/1347438.
@article{osti_1347438,
title = {Atomic layer deposition of metal sulfide thin films using non-halogenated precursors},
author = {Martinson, Alex B. F. and Elam, Jeffrey W. and Pellin, Michael J.},
abstractNote = {A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {5}
}

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Works referenced in this record:

Atomic layer deposition of Cu2S for future application in photovoltaics
journal, March 2009


Growth of conductive copper sulfide thin films by atomic layer deposition
journal, February 2002


Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor
journal, January 2006


CuInS2–TiO2 heterojunctions solar cells obtained by atomic layer deposition
journal, May 2003


Comparison of Cu x S Films Grown by Atomic Layer Deposition and Chemical Vapor Deposition
journal, May 2005


Synthesis and Characterization of Copper(I) Amidinates as Precursors for Atomic Layer Deposition (ALD) of Copper Metal
journal, March 2005