Vertical III-nitride thin-film power diode

Title: Vertical III-nitride thin-film power diode

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Inventors:: Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

Issue Date:: 2017-03-14

OSTI Identifier:: 1346948

Assignee:: Sandia Corporation SNL-A

Patent Number(s):: 9,595,616

Application Number:: 14/957,012

Contract Number:: AC04-94AL85000

Resource Relation:: Patent File Date: 2015 Dec 02

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

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Works referenced in this record:

PdIn ohmic contact to GaAs
patent, September 1991

Lau, Silvanius S.; Sands, Timothy D.; Wang, Long-Ching
US Patent Document 5,045,502
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/5045502

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