Title: Vertical III-nitride thin-film power diode

Abstract

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Inventors:

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

Issue Date:

2017-03-14

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1346948

Patent Number(s):

9595616

Application Number:

14/957,012

Assignee:

Sandia Corporation

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/2003 - {Nitride compounds}
H01L29/861 - Diodes
H01L21/268 - using electromagnetic radiation, e.g. laser radiation
H01L29/66212 - {Schottky diodes}
H01L29/872 - Schottky diodes
H01L29/0615 - {by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
H01L29/66204 - {Diodes}
H01L29/0619 - {with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction}
H01L29/8613 - {Mesa PN junction diodes}
H01L29/6609 - {Diodes}
H01L21/0254 - {Nitrides}

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Dec 02

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE