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Title: Vertical III-nitride thin-film power diode

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1346948
Assignee:
Sandia Corporation SNL-A
Patent Number(s):
9,595,616
Application Number:
14/957,012
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2015 Dec 02
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record: