Vertical III-nitride thin-film power diode
Abstract
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1346948
- Patent Number(s):
- 9,595,616
- Application Number:
- 14/957,012
- Assignee:
- Sandia Corporation
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Dec 02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wierer, Jr., Jonathan, Fischer, Arthur J., and Allerman, Andrew A. Vertical III-nitride thin-film power diode. United States: N. p., 2017.
Web.
Wierer, Jr., Jonathan, Fischer, Arthur J., & Allerman, Andrew A. Vertical III-nitride thin-film power diode. United States.
Wierer, Jr., Jonathan, Fischer, Arthur J., and Allerman, Andrew A. Tue .
"Vertical III-nitride thin-film power diode". United States. https://www.osti.gov/servlets/purl/1346948.
@article{osti_1346948,
title = {Vertical III-nitride thin-film power diode},
author = {Wierer, Jr., Jonathan and Fischer, Arthur J. and Allerman, Andrew A.},
abstractNote = {A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {3}
}
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Works referenced in this record:
PdIn ohmic contact to GaAs
patent, September 1991
- Lau, Silvanius S.; Sands, Timothy D.; Wang, Long-Ching
- US Patent Document 5,045,502