Global to push GA events into
skip to main content

Title: Microstructured silicon radiation detector

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.
; ;
Issue Date:
OSTI Identifier:
Sandia Corporation SNL-A
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2014 Aug 11
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

Other works cited in this record:

Coated semiconductor devices for neutron detection
patent, November 2002

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein
patent, March 2003

Pocked surface neutron detector
patent, April 2003

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein
patent, April 2004

Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
patent, August 2004

Method and system for detecting ionizing radiation
patent, October 2004

Method and system for measuring neutron emissions and ionizing radiation, solid state detector for use therein, and imaging system and array of such detectors for use therein

High-efficiency neutron detectors and methods of making same
patent, January 2007

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same
patent, December 2010

Characteristics of the stacked microstructured solid state neutron detector
conference, August 2010
  • Bellinger, S. L.; Fronk, R. G.; McNeil, W. J.
  • SPIE Optical Engineering + Applications 2010, Vol. 7805, Article No. 78050N
  • DOI: 10.1117/12.863603

Formation Mechanism and Properties of Electrochemically Etched Trenches in n-Type Silicon
journal, January 1990
  • Lehmann, V.; Föll, H.
  • Journal of The Electrochemical Society, Vol. 137, Issue 2, p. 653-659
  • DOI: 10.1149/1.2086525

The Physics of Macropore Formation in Low Doped n-Type Silicon
journal, January 1993
  • Lehmann, V.
  • Journal of The Electrochemical Society, Vol. 140, Issue 10, p. 2836-2843
  • DOI: 10.1149/1.2220919

Recent results from thin-film-coated semiconductor neutron detectors
conference, January 2003
  • McGregor, Douglas S.; Klann, Raymond T.; Sanders, Jeffrey D.
  • International Symposium on Optical Science and Technology, Vol. 4784
  • DOI: 10.1117/12.455697

Structuring of Macroporous Silicon for Applications as Photonic Crystals
journal, January 2000
  • Müller, F.; Birner, A.; Gösele, U.
  • Journal of Porous Materials, Vol. 7, Issue 1/3, p. 201-204
  • DOI: 10.1023/A:1009690805415

Gamma discrimination in pillar structured thermal neutron detectors
conference, May 2012
  • Shao, Q.; Radev, R. P.; Conway, A. M.
  • SPIE Defense, Security, and Sensing, Vol. 8358, Article No. 83581N
  • DOI: 10.1117/12.918513

Designs for micro-structured semiconductor neutron detectors
conference, September 2008

Similar records in DOepatents and OSTI.GOV collections: