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Title: Microstructured silicon radiation detector

Abstract

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Inventors:
; ;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1346947
Patent Number(s):
9595628
Application Number:
14/456,934
Assignee:
Sandia Corporation
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 11
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Okandan, Murat, Derzon, Mark S., and Draper, Bruce L. Microstructured silicon radiation detector. United States: N. p., 2017. Web.
Okandan, Murat, Derzon, Mark S., & Draper, Bruce L. Microstructured silicon radiation detector. United States.
Okandan, Murat, Derzon, Mark S., and Draper, Bruce L. Tue . "Microstructured silicon radiation detector". United States. https://www.osti.gov/servlets/purl/1346947.
@article{osti_1346947,
title = {Microstructured silicon radiation detector},
author = {Okandan, Murat and Derzon, Mark S. and Draper, Bruce L.},
abstractNote = {A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {3}
}

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Works referenced in this record:

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