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Title: Microstructured silicon radiation detector

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1346947
Assignee:
Sandia Corporation SNL-A
Patent Number(s):
9,595,628
Application Number:
14/456,934
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2014 Aug 11
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

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