Microstructured silicon radiation detector

Title: Microstructured silicon radiation detector

A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 .mu.m or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.

Inventors:: Okandan, Murat; Derzon, Mark S.; Draper, Bruce L.

Issue Date:: 2017-03-14

OSTI Identifier:: 1346947

Assignee:: Sandia Corporation SNL-A

Patent Number(s):: 9,595,628

Application Number:: 14/456,934

Contract Number:: AC04-94AL85000

Resource Relation:: Patent File Date: 2014 Aug 11

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Full Text
View Full Text

Have feedback or suggestions for a way to improve these results? !

Save / Share this Record no
Export Metadata
- Endnote
- RIS
- Excel
- CSV
- XML
Send to Email

Send to Email

Email address:

Content:

Works referenced in this record:

Coated semiconductor devices for neutron detection
patent, November 2002

Klann, Raymond T.; McGregor, Douglas S.
US Patent Document 6,479,826
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6479826

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein
patent, March 2003

Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.
US Patent Document 6,528,79
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6528797

Pocked surface neutron detector
patent, April 2003

McGregor, Douglas; Klann, Raymond
US Patent Document 6,545,28
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6545281

Method and system for determining depth distribution of radiation-emitting material located in a source medium and radiation detector system for use therein
patent, April 2004

Benke, Roland R.; Kearfott, Kimberlee J.; McGregor, Douglas S.
US Patent Document 6,727,505
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6727505

Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module
patent, August 2004

McGregor, Douglas S.
US Patent Document 6,781,132
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6781132

Method and system for detecting ionizing radiation
patent, October 2004

McGregor, Douglas S.; Kearfott, Kimberlee J.
US Patent Document 6,806,474
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6806474

Method and system for measuring neutron emissions and ionizing radiation, solid state detector for use therein, and imaging system and array of such detectors for use therein
patent,

McGregor, Douglas S.
US Patent Document 6,921,903
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F6921903

High-efficiency neutron detectors and methods of making same
patent, January 2007

McGregor, Douglas S.; Klann, Raymond
US Patent Document 7,164,138
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7164138

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same
patent, December 2010

McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.
US Patent Document 7,855,372
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN%2F7855372

Characteristics of the stacked microstructured solid state neutron detector
conference, August 2010

Bellinger, S. L.; Fronk, R. G.; McNeil, W. J.
SPIE Optical Engineering + Applications 2010, Vol. 7805, Article No. 78050N
DOI: 10.1117/12.863603

Formation Mechanism and Properties of Electrochemically Etched Trenches in n-Type Silicon
journal, January 1990

Lehmann, V.; Föll, H.
Journal of The Electrochemical Society, Vol. 137, Issue 2, p. 653-659
DOI: 10.1149/1.2086525

The Physics of Macropore Formation in Low Doped n-Type Silicon
journal, January 1993

Lehmann, V.
Journal of The Electrochemical Society, Vol. 140, Issue 10, p. 2836-2843
DOI: 10.1149/1.2220919

Recent results from thin-film-coated semiconductor neutron detectors
conference, January 2003

McGregor, Douglas S.; Klann, Raymond T.; Sanders, Jeffrey D.
International Symposium on Optical Science and Technology, Vol. 4784
DOI: 10.1117/12.455697

Structuring of Macroporous Silicon for Applications as Photonic Crystals
journal, January 2000

Müller, F.; Birner, A.; Gösele, U.
Journal of Porous Materials, Vol. 7, Issue 1/3, p. 201-204
DOI: 10.1023/A:1009690805415

Gamma discrimination in pillar structured thermal neutron detectors
conference, May 2012

Shao, Q.; Radev, R. P.; Conway, A. M.
SPIE Defense, Security, and Sensing, Vol. 8358, Article No. 83581N
DOI: 10.1117/12.918513

Designs for micro-structured semiconductor neutron detectors
conference, September 2008

Shultis, J. Kenneth; McGregor, Douglas S.; Burger, Arnold
DOI: 10.1117/12.797477

Similar Records

Similar records in DOepatents and OSTI.GOV collections:

Apparatuses and methods for detecting, identifying and quantitating radioactive nuclei and methods of distinguishing neutron stimulation of a radiation particle detector from gamma-ray stimulation of a detector

Patent Cole, Jerald D. ; Drigert, Mark W. ; Reber, Edward L. ; Aryaeinejad, Rahmat

In one aspect, the invention encompasses a method of detecting radioactive decay, comprising: a) providing a sample comprising a radioactive material, the radioactive material generating decay particles; b)providing a plurality of detectors proximate the sample, the detectors comprising a first set and a second set, the first set of the detectors comprising liquid state detectors utilizing liquid scintillation material coupled with photo tubes to generate a first electrical signal in response to decay particles stimulating the liquid scintillation material, the second set of the detectors comprising solid state detectors utilizing a crystalline solid to generate a second electrical signal inmore »« less
Full Text Available January 2001
Stacked silicide/silicon mid- to long-wavelength infrared detector

Patent Maserjian, Joseph

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.
Full Text Available March 1990
Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

Patent Holland, Stephen Edward

The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on themore »« less
Full Text Available February 2000
Junction-side illuminated silicon detector arrays

Patent Iwanczyk, Jan S. ; Patt, Bradley E. ; Tull, Carolyn

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readoutmore »« less
Full Text Available March 2004
Lithium-drifted silicon detector with segmented contacts

Patent Tindall, Craig S. ; Luke, Paul N.

A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a secondmore »« less
Full Text Available June 2006