Systems and methods for advanced ultra-high-performance InP solar cells
Abstract
Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1346013
- Patent Number(s):
- 9590131
- Application Number:
- 14/226,540
- Assignee:
- Alliance for Sustainable Energy, LLC
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Mar 26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Wanlass, Mark. Systems and methods for advanced ultra-high-performance InP solar cells. United States: N. p., 2017.
Web.
Wanlass, Mark. Systems and methods for advanced ultra-high-performance InP solar cells. United States.
Wanlass, Mark. Tue .
"Systems and methods for advanced ultra-high-performance InP solar cells". United States. https://www.osti.gov/servlets/purl/1346013.
@article{osti_1346013,
title = {Systems and methods for advanced ultra-high-performance InP solar cells},
author = {Wanlass, Mark},
abstractNote = {Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {3}
}
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