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Title: Growth methods for controlled large-area fabrication of high-quality graphene analogs

In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1345374
Assignee:
WILLIAM MARSH RICE UNIVERSITY ORNL
Patent Number(s):
9,580,834
Application Number:
14/203,958
Contract Number:
FG02-09ER46554
Resource Relation:
Patent File Date: 2014 Mar 11
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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