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Title: Growth methods for controlled large-area fabrication of high-quality graphene analogs

Abstract

In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.

Inventors:
; ; ;
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345374
Patent Number(s):
9580834
Application Number:
14/203,958
Assignee:
WILLIAM MARSH RICE UNIVERSITY
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
FG02-09ER46554
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., and Lou, Jun. Growth methods for controlled large-area fabrication of high-quality graphene analogs. United States: N. p., 2017. Web.
Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., & Lou, Jun. Growth methods for controlled large-area fabrication of high-quality graphene analogs. United States.
Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., and Lou, Jun. Tue . "Growth methods for controlled large-area fabrication of high-quality graphene analogs". United States. https://www.osti.gov/servlets/purl/1345374.
@article{osti_1345374,
title = {Growth methods for controlled large-area fabrication of high-quality graphene analogs},
author = {Najmaei, Sina and Liu, Zheng and Ajayan, Pulickel M. and Lou, Jun},
abstractNote = {In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {2}
}

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Works referenced in this record:

Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
journal, February 2012


Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012


Valley filter and valley valve in graphene
journal, February 2007


Single-Layer MoS2 Phototransistors
journal, December 2011


Single-Layer MoS2 Phototransistors
journal, December 2011


Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
journal, October 2011


Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication
journal, October 2011


Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
journal, February 2011


Atomically thin layers of MoS2 via a two step thermal evaporation–exfoliation method
journal, January 2012


Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
journal, February 2012


Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
journal, February 2012


Basic Reaction Steps in the Sulfidation of Crystalline MoO3 to MoS2, As Studied by X-ray Photoelectron and Infrared Emission Spectroscopy
journal, January 1996


Formation of MoS2 Inorganic Fullerenes (IFs) by the Reaction of MoO3 Nanobelts and S
journal, June 2003


Polycrystalline Molybdenum Disulfide (2H−MoS2) Nano- and Microribbons by Electrochemical/Chemical Synthesis
journal, February 2004


Large-Scale Synthesis of MoS2 Bucky Onions
journal, February 2007


Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth
journal, October 2011


Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge
journal, April 2011


Electronic transport in polycrystalline graphene
journal, August 2010


Grains and grain boundaries in single-layer graphene atomic patchwork quilts
journal, January 2011


Grain Boundary Mapping in Polycrystalline Graphene
journal, March 2011


Topological defects in graphene: Dislocations and grain boundaries
journal, May 2010


Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
journal, July 2012


van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
journal, May 2012


Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles
journal, December 2012


Graphene-Like Two-Dimensional Materials
journal, January 2013


Metal dichalcogenide nanosheets: preparation, properties and applications
journal, January 2013


Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
journal, August 2010


Visualization and quantification of transition metal atomic mixing in Mo1−xWxS2 single layers
journal, January 2013


Atomic layers of hybridized boron nitride and graphene domains
journal, February 2010


Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2
journal, July 2012


Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013


Two-Dimensional Transition Metal Dichalcogenide Alloys: Stability and Electronic Properties
journal, November 2012


Growth and characterization of large, high quality MoSe2 single crystals
journal, January 2013


Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013


Tunable Band Gap Photoluminescence from Atomically Thin Transition-Metal Dichalcogenide Alloys
journal, April 2013


Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005


Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005


Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
journal, May 2009


Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation
journal, February 2012


Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
journal, March 2011


Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
journal, May 2011


Two-Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
journal, October 2011


Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Emerging Photoluminescence in Monolayer MoS2
journal, April 2010


Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012


Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013


Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy
journal, March 2013


Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
journal, May 2013