Growth methods for controlled large-area fabrication of high-quality graphene analogs
Abstract
In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1345374
- Patent Number(s):
- 9580834
- Application Number:
- 14/203,958
- Assignee:
- WILLIAM MARSH RICE UNIVERSITY
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- FG02-09ER46554
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Mar 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., and Lou, Jun. Growth methods for controlled large-area fabrication of high-quality graphene analogs. United States: N. p., 2017.
Web.
Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., & Lou, Jun. Growth methods for controlled large-area fabrication of high-quality graphene analogs. United States.
Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., and Lou, Jun. Tue .
"Growth methods for controlled large-area fabrication of high-quality graphene analogs". United States. https://www.osti.gov/servlets/purl/1345374.
@article{osti_1345374,
title = {Growth methods for controlled large-area fabrication of high-quality graphene analogs},
author = {Najmaei, Sina and Liu, Zheng and Ajayan, Pulickel M. and Lou, Jun},
abstractNote = {In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS.sub.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {2}
}
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