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Title: Graphene layer formation on a carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345360
Patent Number(s):
9202684
Application Number:
14/167,477
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jan 29
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sumant, Anirudha V., and Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States: N. p., 2015. Web.
Sumant, Anirudha V., & Balandin, Alexander. Graphene layer formation on a carbon based substrate. United States.
Sumant, Anirudha V., and Balandin, Alexander. Tue . "Graphene layer formation on a carbon based substrate". United States. https://www.osti.gov/servlets/purl/1345360.
@article{osti_1345360,
title = {Graphene layer formation on a carbon based substrate},
author = {Sumant, Anirudha V. and Balandin, Alexander},
abstractNote = {A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {12}
}

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Works referenced in this record:

Energy Dissipation in Graphene Field-Effect Transistors
journal, May 2009


Thermal stability and rehybridization of carbon bonding in tetrahedral amorphous carbon
journal, February 2010


Low-temperature synthesis of large-area graphene-based transparent conductive films using surface wave plasma chemical vapor deposition
journal, February 2011


Breakdown Current Density of CVD-Grown Multilayer Graphene Interconnects
journal, April 2011


Synthesis, Characterization, and Properties of Large-Area Graphene Films
journal, January 2009


100-GHz Transistors from Wafer-Scale Epitaxial Graphene
journal, February 2010


Electronics: Industry-compatible graphene transistors
journal, April 2011


In Situ Characterization of Alloy Catalysts for Low-Temperature Graphene Growth
journal, October 2011


Bilayer Graphene System: Current-Induced Reliability Limit
journal, October 2010


Graphene-on-Diamond Devices with Increased Current-Carrying Capacity: Carbon sp2 -on-sp3 Technology
journal, February 2012