Title: Graphene layer formation on a carbon based substrate

Abstract

A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Inventors:

Sumant, Anirudha V.; Balandin, Alexander

Issue Date:

Tue Dec 01 00:00:00 EST 2015

Research Org.:

Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1345360

Patent Number(s):

9202684

Application Number:

14/167,477

Assignee:

UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):

C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING

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C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

C09K19/56 - Aligning agents

G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING

G02F1/133711 - {by organic films, e.g. polymeric films}
G02F1/133723 - {Polyimide, polyamide-imide}
G02F1/133788 - {by light irradiation, e.g. linearly polarised light photo-polymerisation}
G02F1/134363 - {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]}
G02F1/1368 - in which the switching element is a three-electrode device {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02376 - {Carbon, e.g. diamond-like carbon}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/02488 - {Insulating materials}
H01L21/02491 - {Conductive materials}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02658 - {Pretreatments
H01L27/1262 - {with a particular formation, treatment or coating of the substrate}
H01L27/1296 - {adapted to increase the uniformity of device parameters}

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DOE Contract Number:  

AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Jan 29

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE