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Title: Lateral electrochemical etching of III-nitride materials for microfabrication

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.
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OSTI Identifier:
Yale University CHO
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Resource Relation:
Patent File Date: 2013 Jun 20
Research Org:
Yale Univ., New Haven, CT (United States)
Sponsoring Org:
Country of Publication:
United States

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