Title: Lateral electrochemical etching of III-nitride materials for microfabrication

Abstract

Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

Inventors:

Han, Jung

Issue Date:

2017-02-28

Research Org.:

Yale Univ., New Haven, CT (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1345219

Patent Number(s):

9583353

Application Number:

13/923,248

Assignee:

Yale University

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30635 - {of AIIIBV compounds}
H01L2924/00 - Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0002 - Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L33/0075 - {comprising nitride compounds}
H01L33/105 - {with a resonant cavity structure}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S5/18341 - {Intra-cavity contacts}
H01S5/18363 - {comprising air layers}
H01S5/18369 - {based on dielectric materials}
H01S5/187 - using a distributed Bragg reflector [SE-DBR-lasers]
H01S5/343 - in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/34333 - {with a well layer based on Ga

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DOE Contract Number:  

FG02-07ER46387

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Jun 20

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY