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Title: Semiconductor structure and recess formation etch technique

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1343744
Assignee:
Massachusetts Institute of Technology ARPA-E
Patent Number(s):
9,570,600
Application Number:
14/442,546
Contract Number:
AR0000123
Resource Relation:
Patent File Date: 2013 Nov 15
Research Org:
Massachusetts Institute of Technology, Cambridge, MA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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