Method of manufacturing a hybrid emitter all back contact solar cell
Abstract
A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.
- Inventors:
- Issue Date:
- Research Org.:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1343277
- Patent Number(s):
- 9,564,551
- Application Number:
- 15/067,960
- Assignee:
- SunPower Corporation
- DOE Contract Number:
- FC36-07GO17043
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Mar 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE
Citation Formats
Loscutoff, Paul, and Rim, Seung. Method of manufacturing a hybrid emitter all back contact solar cell. United States: N. p., 2017.
Web.
Loscutoff, Paul, & Rim, Seung. Method of manufacturing a hybrid emitter all back contact solar cell. United States.
Loscutoff, Paul, and Rim, Seung. Tue .
"Method of manufacturing a hybrid emitter all back contact solar cell". United States. https://www.osti.gov/servlets/purl/1343277.
@article{osti_1343277,
title = {Method of manufacturing a hybrid emitter all back contact solar cell},
author = {Loscutoff, Paul and Rim, Seung},
abstractNote = {A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {2}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Photovoltaic solar cell
patent, September 2015
- Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat
- US Patent Document 9,130,092
Solar cell and method for manufacturing solar cell
patent, February 2016
- Morigami, Mitsuaki; Hishida, Yuji; Ide, Daisuke
- US Patent Document 9,252,301
Method for producing photoelectric conversion element
patent, February 2016
- Hashiguchi, Taiki; Kirihata, Yutaka
- US Patent Document 9,257,593
Solar Cell Element Manufacturing Method and Solar Cell Element
patent-application, September 2009
- Niira, Koichiro; Komoda, Manabu
- US Patent Application 12/430631; 20090223562