Method of manufacturing a hybrid emitter all back contact solar cell

Title: Method of manufacturing a hybrid emitter all back contact solar cell

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Inventors:: Loscutoff, Paul; Rim, Seung

Issue Date:: 2017-02-07

OSTI Identifier:: 1343277

Assignee:: SunPower Corporation GFO

Patent Number(s):: 9,564,551

Application Number:: 15/067,960

Contract Number:: FC36-07GO17043

Resource Relation:: Patent File Date: 2016 Mar 11

Research Org:: SunPower Corporation, San Jose, CA (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Full Text
View Full Text

Have feedback or suggestions for a way to improve these results? !

Save / Share this Record no
Export Metadata
- Endnote
- RIS
- Excel
- CSV
- XML
Send to Email

Send to Email

Email address:

Content:

Works referenced in this record:

Photovoltaic solar cell
patent, September 2015

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat
US Patent Document 9,130,092
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9130092

Solar cell and method for manufacturing solar cell
patent, February 2016

Morigami, Mitsuaki; Hishida, Yuji; Ide, Daisuke
US Patent Document 9,252,301
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9252301

Method for producing photoelectric conversion element
patent, February 2016

Hashiguchi, Taiki; Kirihata, Yutaka
US Patent Document 9,257,593
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/9257593

Solar Cell Element Manufacturing Method and Solar Cell Element
patent-application, September 2009

Niira, Koichiro; Komoda, Manabu
US Patent Application 12/430631; 20090223562
URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220090223562%22.PGNR.&OS=DN/20090223562&RS=DN/20090223562

Similar Records

Similar records in DOepatents and OSTI.GOV collections:

Hybrid emitter all back contact solar cell

Patent Loscutoff, Paul ; Rim, Seung

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.
Full Text Available April 2016
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.
Full Text Available July 2013
Method of forming contacts for a back-contact solar cell

Patent Manning, Jane

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Full Text Available July 2014
Method of fabricating a back-contact solar cell and device thereof

Patent Li, Bo ; Smith, David ; Cousins, Peter

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
Full Text Available July 2014
Method or forming emitters for a back-contact solar cell

Patent Li, Bo ; Cousins, Peter J. ; Smith, David D.

Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state dopant source includes a plurality of regions separated by gaps. Regions of a second solid-state dopant source are formed above the substrate by printing.
Full Text Available August 2014