Title: Method of manufacturing a hybrid emitter all back contact solar cell

Abstract

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Inventors:

Loscutoff, Paul; Rim, Seung

Issue Date:

2017-02-07

Research Org.:

SunPower Corporation, San Jose, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1343277

Patent Number(s):

9564551

Application Number:

15/067,960

Assignee:

SunPower Corporation

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/022441 - {Electrode arrangements specially adapted for back-contact solar cells}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/546 - Polycrystalline silicon PV cells
Y02E10/50 - Photovoltaic [PV] energy

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/022458 - {for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/182 - {Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si}
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L31/0682 - {back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells}
H01L31/068 - the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L31/03682 - {including only elements of Group IV of the Periodic System}

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DOE Contract Number:  

FC36-07GO17043

Resource Type:

Patent

Resource Relation:

Patent File Date: 2016 Mar 11

Country of Publication:

United States

Language:

English

Subject:

14 SOLAR ENERGY; 36 MATERIALS SCIENCE