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Title: Methods of depositing an alpha-silicon-carbide-containing film at low temperature

Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
Application Number:
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Resource Relation:
Patent File Date: 2014 Aug 05
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Country of Publication:
United States

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