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Title: Methods of depositing an alpha-silicon-carbide-containing film at low temperature

Abstract

Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.

Inventors:
Issue Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1339633
Patent Number(s):
9546420
Application Number:
14/452,322
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Habermehl, Scott D. Methods of depositing an alpha-silicon-carbide-containing film at low temperature. United States: N. p., 2017. Web.
Habermehl, Scott D. Methods of depositing an alpha-silicon-carbide-containing film at low temperature. United States.
Habermehl, Scott D. Tue . "Methods of depositing an alpha-silicon-carbide-containing film at low temperature". United States. https://www.osti.gov/servlets/purl/1339633.
@article{osti_1339633,
title = {Methods of depositing an alpha-silicon-carbide-containing film at low temperature},
author = {Habermehl, Scott D.},
abstractNote = {Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}

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Works referenced in this record:

Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition
journal, July 2001


Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study
journal, October 2000


A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications
journal, April 2007


Surface and interface stress effects in thin films
journal, May 1994


Origin of Compressive Residual Stress in Polycrystalline Thin Films
journal, March 2002


Low Pressure Chemical Etching of Silicon by HCl / H2 Gas Mixtures
journal, January 1987


Low Stress Polycrystalline SiC Thin Films Suitable for MEMS Applications
journal, January 2011


Use of deposition pressure to control residual stress in polycrystalline SiC films
journal, January 2004


Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS applications
journal, March 2005


Thermodynamic Analysis of Blanket and Selective Epitaxy of Sic on Si and SiO2 Masked Si
journal, January 1996


Refinement of the crystal structure of SiC type 6H
journal, October 1967


Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C
journal, July 2012


Stress relaxation in Si-rich silicon nitride thin films
journal, May 1998


A computational study into the origin of SiC polytypes
journal, January 1992


Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD
journal, September 2006


Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition
journal, February 2004


Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment
journal, July 1997


A vacancy model of the heteropolytype epitaxy of SiC
journal, March 2005


Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition
journal, September 2009


Residual stress characterization of polycrystalline 3C-SiC films on Si(100) deposited from methylsilane
journal, July 2009