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Title: Methods of depositing an alpha-silicon-carbide-containing film at low temperature

Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.
Inventors:
Issue Date:
OSTI Identifier:
1339633
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
Patent Number(s):
9,546,420
Application Number:
14/452,322
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2014 Aug 05
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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