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Title: Spintronic device

Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1339550
Assignee:
Northeastern University (Boston, MA) LBNL
Patent Number(s):
9,548,382
Application Number:
14/434,483
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2013 Oct 11
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Other works cited in this record:

Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity
patent, January 1994

Spintronic devices and method for injecting spin polarized electrical currents into semiconductors
patent, March 2002

Device and method for manipulating direction of motion of current carriers
patent, July 2012

Giant magnetoresistance in silicene nanoribbons
journal, January 2012
  • Xu, Chengyong; Luo, Guangfu; Liu, Qihang
  • Nanoscale, Vol. 4, Issue 10, p. 3111-3117
  • DOI: 10.1039/C2NR00037G

Gated silicene as a tunable source of nearly 100% spin-polarized electrons
journal, February 2013
  • Tsai, Wei-Feng; Huang, Cheng-Yi; Chang, Tay-Rong
  • Nature Communications, Vol. 4, Article No. 1500
  • DOI: 10.1038/ncomms2525

Half-Metallic Silicene and Germanene Nanoribbons: Towards High-Performance Spintronics Device
journal, October 2012

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