Title: Spintronic device

Abstract

Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.

Inventors:

Jeng, Horng-Tay; Chang, Tay-Rong; Bansil, Arun; Lin, Hsin; Tsai, Wei-Feng; Huang, Cheng-Yi

Issue Date:

2017-01-17

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1339550

Patent Number(s):

9548382

Application Number:

14/434,483

Assignee:

Northeastern University (Boston, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/66431 - {with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
H01L29/66984 - {Devices using spin polarized carriers}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L43/08 - Magnetic-field-controlled resistors
H01L29/7613 - {Single electron transistors
H01L29/7781 - {with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT}
H01L29/1606 - {Graphene}

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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DOE Contract Number:  

AC02-05CH11231

Resource Type:

Patent

Resource Relation:

Patent File Date: 2013 Oct 11

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION