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Title: Spintronic device

Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
Inventors:
; ; ; ; ;
Issue Date:
OSTI Identifier:
1339550
Assignee:
Northeastern University (Boston, MA) LBNL
Patent Number(s):
9,548,382
Application Number:
14/434,483
Contract Number:
AC02-05CH11231
Resource Relation:
Patent File Date: 2013 Oct 11
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Works referenced in this record:

Giant magnetoresistance in silicene nanoribbons
journal, January 2012
  • Xu, Chengyong; Luo, Guangfu; Liu, Qihang
  • Nanoscale, Vol. 4, Issue 10, p. 3111-3117
  • DOI: 10.1039/C2NR00037G

Gated silicene as a tunable source of nearly 100% spin-polarized electrons
journal, February 2013
  • Tsai, Wei-Feng; Huang, Cheng-Yi; Chang, Tay-Rong
  • Nature Communications, Vol. 4, Article No. 1500
  • DOI: 10.1038/ncomms2525

Half-Metallic Silicene and Germanene Nanoribbons: Towards High-Performance Spintronics Device
journal, October 2012