Spintronic device
Abstract
Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
- Inventors:
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1339550
- Patent Number(s):
- 9548382
- Application Number:
- 14/434,483
- Assignee:
- Northeastern University (Boston, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
- DOE Contract Number:
- AC02-05CH11231
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 11
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION
Citation Formats
Jeng, Horng-Tay, Chang, Tay-Rong, Bansil, Arun, Lin, Hsin, Tsai, Wei-Feng, and Huang, Cheng-Yi. Spintronic device. United States: N. p., 2017.
Web.
Jeng, Horng-Tay, Chang, Tay-Rong, Bansil, Arun, Lin, Hsin, Tsai, Wei-Feng, & Huang, Cheng-Yi. Spintronic device. United States.
Jeng, Horng-Tay, Chang, Tay-Rong, Bansil, Arun, Lin, Hsin, Tsai, Wei-Feng, and Huang, Cheng-Yi. Tue .
"Spintronic device". United States. https://www.osti.gov/servlets/purl/1339550.
@article{osti_1339550,
title = {Spintronic device},
author = {Jeng, Horng-Tay and Chang, Tay-Rong and Bansil, Arun and Lin, Hsin and Tsai, Wei-Feng and Huang, Cheng-Yi},
abstractNote = {Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}
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Half-Metallic Silicene and Germanene Nanoribbons: Towards High-Performance Spintronics Device
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