High bandgap III-V alloys for high efficiency optoelectronics
Abstract
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1338904
- Patent Number(s):
- 9543468
- Application Number:
- 13/878,738
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC36-08GO28308
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2011 Oct 12
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Alberi, Kirstin, Mascarenhas, Angelo, and Wanlass, Mark. High bandgap III-V alloys for high efficiency optoelectronics. United States: N. p., 2017.
Web.
Alberi, Kirstin, Mascarenhas, Angelo, & Wanlass, Mark. High bandgap III-V alloys for high efficiency optoelectronics. United States.
Alberi, Kirstin, Mascarenhas, Angelo, and Wanlass, Mark. Tue .
"High bandgap III-V alloys for high efficiency optoelectronics". United States. https://www.osti.gov/servlets/purl/1338904.
@article{osti_1338904,
title = {High bandgap III-V alloys for high efficiency optoelectronics},
author = {Alberi, Kirstin and Mascarenhas, Angelo and Wanlass, Mark},
abstractNote = {High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}
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