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Title: High bandgap III-V alloys for high efficiency optoelectronics

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1338904
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
9,543,468
Application Number:
13/878,738
Contract Number:
AC36-08GO28308
Resource Relation:
Patent File Date: 2011 Oct 12
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

Apparatus and method for pulse tracker ranging equipment with increased resolution
patent, August 1975

Thin film photovoltaic converter and method of preparing same
patent, July 1980

Selective reactive ion etching of polysilicon against SiO2 utilizing SF6-Cl2-inert gas etchant
patent, July 1980

Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
patent, March 1981

Device for conversion of electromagnetic radiation into electrical current
patent, July 1981

Stacked multijunction photovoltaic converters
July 1982

Junctions for monolithic cascade solar cells and methods
patent, November 1989

Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice
patent, October 1990

Substrate structures for InP-based devices
patent, October 1990

Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
patent, March 1991

Monolithic tandem solar cell
patent, May 1991

Bilevel contact solar cells
patent, October 1991

Method of manufacturing III-IV group compound semiconductor device
patent, January 1992

Multi-color photosensitive element with heterojunctions
patent, August 1992

Epitaxial growth method
patent, February 1993

Monolithic voltage-matched tandem photovoltaic cell and method for making same
patent, November 1993

Method of manufacturing a semiconductor laser device
patent, November 1993

Monolithic tandem solar cell
patent, June 1994

Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
patent, December 1994

Method for vaporizing and supplying organometal compounds
patent, January 1995

Method for producing a light emitting diode having transparent substrate
patent, April 1995

Tandem solar cell with improved tunnel junction
patent, April 1995

Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
patent, October 1995

Multiwavelength infrared focal plane array detector
patent, December 1995

Hydrogen passivated heteroepitaxial III-V photovoltaic devices grown on lattice-mismatched substrates, and process
patent, November 1996

Semiconductor heterojunction material
patent, February 1998

Monolithically integrated solar cell microarray and fabrication method
patent, February 1998

A1GaInP light emitting diode
patent, April 1998

High efficiency multi-junction solar cells
patent, December 1998

Energy-band-matched infrared emitter for use with low bandgap thermophotovoltaic cells
patent, February 1999

High-efficiency solar cell and method for fabrication
patent, August 1999

Nitride semiconductor device
patent, September 1999

Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions
patent, December 1999

Dot-junction photovoltaic cells using high-absorption semiconductors
patent, March 2000

III-V arsenide-nitride semiconductor
patent, August 2000

Semiconductor thin film, method for manufacturing the same, and solar cell using the same
patent, August 2000

Quantum well thermophotovoltaic energy converter
patent, November 2000

Dispersants and dispersant viscosity index improvers from selectively hydrogenated polymers: free radically initiated direct grafting reaction products
patent, December 2000

Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance
patent, December 2000

Fabrication of single absorber layer radiated energy conversion device
patent, January 2001

Compact man-portable thermophotovoltaic battery charger
patent, April 2001

Relaxed InxGa(1-x)as buffers
patent, May 2001

Electrical isolation of component cells in monolithically interconnected modules
patent, May 2001

InGaAsN/GaAs heterojunction for multi-junction solar cells
patent, June 2001

Bilayer passivation structure for photovoltaic cells
patent, July 2001

High voltage photovoltaic power converter
patent, July 2001

Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge
patent, August 2001

Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters
patent, October 2001

Lattice matched solar cell and method for manufacturing the same
patent, October 2001

Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
patent, November 2001

Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
patent, January 2002

Light emitting diode of improved current blocking and light extraction structure
patent, July 2002

Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
patent, November 2002

High electron mobility transistor
patent, December 2002

Compound semiconductor structures for optoelectronic devices
patent, May 2003

Multi-junction photovoltaic cell
patent, December 2003

Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
patent, January 2004

Silicon solar cell with germanium backside solar cell
patent, June 2004

Isoelectronic co-doping
patent, November 2004

AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor
patent, July 2005

High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
patent, October 2005

Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate
patent, January 2006

Semiconductor light emitting element
patent, February 2006

Voltage-matched, monolithic, multi-band-gap devices
patent, August 2006

Multi-junction solar cell device
patent, December 2007

Reactive codoping of GaAlInP compound semiconductors
patent, February 2008

Compound solar battery and manufacturing method thereof
patent, February 2009

Metamorphic buffer on small lattice constant substrates
patent, December 2009

Light-emitting diode and method for manufacturing the same
patent, March 2010

Group III nitride based quantum well light emitting device structures with an indium containing capping structure
patent, April 2010

High-power infrared semiconductor diode light emitting device
patent, April 2010

Charged particle beam apparatus and methods for capturing images using the same
patent, October 2010

Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission
patent, November 2011

High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
patent, November 2011

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
patent, May 2012

High-efficiency, monolithic, multi-bandgap, tandem, photovoltaic energy converters
patent, May 2014

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
patent, July 2014

High performance, high bandgap, lattice-mismatched, GaInP solar cells
patent, July 2014

Antireflection coating design for series interconnected multi-junction solar cells
journal, January 2000

Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density
journal, August 2000
  • Kim, Andrew Y.; Groenert, Michael E.; Fitzgerald, Eugene A.
  • Journal of Electronic Materials, Vol. 29, Issue 8, p. L9-L12
  • DOI: 10.1007/s11664-000-0173-6

Computer modeling of a two-junction, monolithic cascade solar cell
journal, January 1980
  • Lamorte, M.F.; Abbott, D.H.
  • IEEE Transactions on Electron Devices, Vol. 27, Issue 1, p. 231-249
  • DOI: 10.1109/T-ED.1980.19845

Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
journal, December 1992
  • Lee, M. K.; Horng, R. H.; Haung, L. C.
  • Journal of Applied Physics, Vol. 72, Issue 11, p. 5420-5422
  • DOI: 10.1063/1.351982

Progress in the development of metamorphic multi-junction III-V space solar cells
journal, August 2002
  • Sinharoy, Samar; Patton, Martin O.; Valko, Thomas M.
  • Progress in Photovoltaics: Research and Applications, Vol. 10, Issue 6, p. 427-432
  • DOI: 10.1002/pip.449

Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters
conference, January 2005

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987
  • Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
  • Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
  • DOI: 10.1063/1.98946

Non-Bloch Nature of Alloy States in a Conventional Semiconductor Alloy GaxIn1xPas an Example
journal, July 2008

Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition
journal, March 2009
  • Zhang, Yong; Jiang, C.-S.; Friedman, D. J.
  • Applied Physics Letters, Vol. 94, Issue 9, Article No. 091113
  • DOI: 10.1063/1.3094918

High performance anti-reflection coatings for broadband multi-junction solar cells
journal, November 2000

Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system
journal, January 1999
  • Halsall, M. P.; Dunbar, A. D. F.; Bangert, U.
  • Journal of Applied Physics, Vol. 85, Issue 1, p. 199-202
  • DOI: 10.1063/1.369469

GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates
journal, September 2000
  • Xin, H. P.; Welty, R. J.; Tu, C. W.
  • Applied Physics Letters, Vol. 77, Issue 13, p. 1946-1948
  • DOI: 10.1063/1.1311957

Metalorganic vapor-phase epitaxy of GaP1−x−yAsyNx quaternary alloys on GaP
journal, June 1998

Photovoltaics: Clean power for the 21st century
journal, September 2006

Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes
journal, July 2001

Ion implantation of isoelectronic impurities into InP
journal, January 1993
  • Yamada, A.; Makita, Y.; Mayer, K. M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, Issue Part 2, p. 910-914
  • DOI: 10.1016/0168-583X(93)90707-D

Very high efficiency solar cell modules
journal, January 2009
  • Barnett, Allen; Kirkpatrick, Douglas; Honsberg, Christiana
  • Progress in Photovoltaics: Research and Applications, Vol. 17, Issue 1, p. 75-83
  • DOI: 10.1002/pip.852

High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007
  • Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
  • Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
  • DOI: 10.1063/1.2753729

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008
  • Geisz, J. F.; Friedman, D. J.; Ward, J. S.
  • Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505
  • DOI: 10.1063/1.2988497

Effect of growth rate on the band gap of Ga0.5In0.5P
journal, October 1990
  • Kurtz, Sarah R.; Olson, J. M.; Kibbler, A.
  • Applied Physics Letters, Vol. 57, Issue 18, p. 1922-1924
  • DOI: 10.1063/1.104013

The Physics of Tunable Disorder in Semiconductor Alloys
book, January 2002
  • Mascarenhas, Angelo; Zhang, Yong; Mascarenhas, Angelo
  • Spontaneous Ordering in Semiconductor Alloys, p. 283-326
  • DOI: 10.1007/978-1-4615-0631-7_11

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
journal, February 1990
  • Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.
  • Applied Physics Letters, Vol. 56, Issue 7, p. 623-625
  • DOI: 10.1063/1.102717

Basic Aspects of Atomic Ordering in III–V Semiconductor Alloys
book, January 2002

Effects of Ordering on Physical Properties of Semiconductor Alloys
book, January 2002

Interplay of alloying and ordering on the electronic structure of GaxIn1xP alloys
journal, December 2008
  • Zhang, Yong; Mascarenhas, A.; Wang, L.-W.
  • Physical Review B, Vol. 78, Issue 23, Article No. 235202
  • DOI: 10.1103/PhysRevB.78.235202

A Rigorous Analysis of Series-Connected, Multi-Bandgap, Tandem Thermophotovoltaic (TPV) Energy Converters
conference, January 2004

Wafer bonding and layer transfer processes for 4-junction high efficiency solar cells
conference, January 2002

Electrochemical performance of α-Fe2O3 nanorods as anode material for lithium-ion cells
journal, February 2009

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy
journal, October 2005
  • Tang, Xiaohong; Zhao, Jinghua; Chin, Mee Koy
  • Applied Physics Letters, Vol. 87, Issue 18, Article No. 181906
  • DOI: 10.1063/1.2120897

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Ordering induced direct-indirect transformation in unstrained GaxIn1−xP for 0.76≤x≤0.78
journal, December 2009
  • Bhusal, L.; Fluegel, B.; Steiner, M. A.
  • Journal of Applied Physics, Vol. 106, Issue 11, Article No. 114909
  • DOI: 10.1063/1.3266175

Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate
journal, August 2001
  • Fujimoto, Yasuhiro; Yonezu, Hiroo; Utsumi, Atsushi
  • Applied Physics Letters, Vol. 79, Issue 9, p. 1306-1308
  • DOI: 10.1063/1.1395519

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