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Title: High bandgap III-V alloys for high efficiency optoelectronics

Abstract

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1338904
Patent Number(s):
9543468
Application Number:
13/878,738
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Alberi, Kirstin, Mascarenhas, Angelo, and Wanlass, Mark. High bandgap III-V alloys for high efficiency optoelectronics. United States: N. p., 2017. Web.
Alberi, Kirstin, Mascarenhas, Angelo, & Wanlass, Mark. High bandgap III-V alloys for high efficiency optoelectronics. United States.
Alberi, Kirstin, Mascarenhas, Angelo, and Wanlass, Mark. Tue . "High bandgap III-V alloys for high efficiency optoelectronics". United States. https://www.osti.gov/servlets/purl/1338904.
@article{osti_1338904,
title = {High bandgap III-V alloys for high efficiency optoelectronics},
author = {Alberi, Kirstin and Mascarenhas, Angelo and Wanlass, Mark},
abstractNote = {High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}

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