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Title: High bandgap III-V alloys for high efficiency optoelectronics

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
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Issue Date:
OSTI Identifier:
Alliance for Sustainable Energy, LLC (Golden, CO) NREL
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2011 Oct 12
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States

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