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Title: Creation of high-pinning microstructures in post production YBCO coated conductors

Abstract

A method comprising irradiating a polycrystalline rare earth metal-alkaline earth metal-transition metal-oxide superconductor layer with protons having an energy of 1 to 6 MeV. The irradiating process produces an irradiated layer that comprises randomly dispersed defects with an average diameter in the range of 1-10 nm.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1338903
Patent Number(s):
9,543,496
Application Number:
14/215,947
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Welp, Ulrich, Miller, Dean J., Kwok, Wai-Kwong, Rupich, Martin W., Fleshler, Steven, and Malozemoff, Alexis P. Creation of high-pinning microstructures in post production YBCO coated conductors. United States: N. p., 2017. Web.
Welp, Ulrich, Miller, Dean J., Kwok, Wai-Kwong, Rupich, Martin W., Fleshler, Steven, & Malozemoff, Alexis P. Creation of high-pinning microstructures in post production YBCO coated conductors. United States.
Welp, Ulrich, Miller, Dean J., Kwok, Wai-Kwong, Rupich, Martin W., Fleshler, Steven, and Malozemoff, Alexis P. Tue . "Creation of high-pinning microstructures in post production YBCO coated conductors". United States. https://www.osti.gov/servlets/purl/1338903.
@article{osti_1338903,
title = {Creation of high-pinning microstructures in post production YBCO coated conductors},
author = {Welp, Ulrich and Miller, Dean J. and Kwok, Wai-Kwong and Rupich, Martin W. and Fleshler, Steven and Malozemoff, Alexis P.},
abstractNote = {A method comprising irradiating a polycrystalline rare earth metal-alkaline earth metal-transition metal-oxide superconductor layer with protons having an energy of 1 to 6 MeV. The irradiating process produces an irradiated layer that comprises randomly dispersed defects with an average diameter in the range of 1-10 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}

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