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Title: Silicon nanowire device and method for its manufacture

There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1338051
Assignee:
Sandia Corporation (Albuquerque, NM SNL-A
Patent Number(s):
9,536,947
Application Number:
13/966,553
Contract Number:
AC04-94AL85000
Resource Relation:
Patent File Date: 2013 Aug 14
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Works referenced in this record:

Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor
journal, December 2009
  • Draper, Bruce; Okandan, Murat; Shaneyfelt, Marty
  • IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3274-3279
  • DOI: 10.1109/TNS.2009.2033917

Gate-all-arround single-crystalline silicon nanowire optical sensor
conference, June 2011