Silicon nanowire device and method for its manufacture
Abstract
There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1338051
- Patent Number(s):
- 9536947
- Application Number:
- 13/966,553
- Assignee:
- Sandia Corporation (Albuquerque, NM
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G06 - COMPUTING G06N - COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Aug 14
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Okandan, Murat, Draper, Bruce L., and Resnick, Paul J. Silicon nanowire device and method for its manufacture. United States: N. p., 2017.
Web.
Okandan, Murat, Draper, Bruce L., & Resnick, Paul J. Silicon nanowire device and method for its manufacture. United States.
Okandan, Murat, Draper, Bruce L., and Resnick, Paul J. Tue .
"Silicon nanowire device and method for its manufacture". United States. https://www.osti.gov/servlets/purl/1338051.
@article{osti_1338051,
title = {Silicon nanowire device and method for its manufacture},
author = {Okandan, Murat and Draper, Bruce L. and Resnick, Paul J.},
abstractNote = {There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor
journal, December 2009
- Draper, Bruce; Okandan, Murat; Shaneyfelt, Marty
- IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3274-3279
Gate-all-arround single-crystalline silicon nanowire optical sensor
conference, June 2011
- Ziaei-Moayyed, M.; Draper, B.; Okandan, M.
- Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS)