Silicon nanowire device and method for its manufacture

Title: Silicon nanowire device and method for its manufacture

There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.

Inventors:: Okandan, Murat; Draper, Bruce L.; Resnick, Paul J.

Issue Date:: 2017-01-03

OSTI Identifier:: 1338051

Assignee:: Sandia Corporation (Albuquerque, NM SNL-A

Patent Number(s):: 9,536,947

Application Number:: 13/966,553

Contract Number:: AC04-94AL85000

Resource Relation:: Patent File Date: 2013 Aug 14

Research Org:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org:: USDOE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

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Other works cited in this record:

Multiple orientation nanowires with gate stack stressors
patent-application, February 2013

Chidambarrao, Dureseti; Liu, Xiao; Sekaric, Lidija
US Patent Document 8,368,125
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/8368125

Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor
journal, December 2009

Draper, Bruce; Okandan, Murat; Shaneyfelt, Marty
IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3274-3279
DOI: 10.1109/TNS.2009.2033917

Gate-all-arround single-crystalline silicon nanowire optical sensor
conference, June 2011

Ziaei-Moayyed, M.; Draper, B.; Okandan, M.
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS)
DOI: 10.1109/TRANSDUCERS.2011.5969830

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