Silicon nanowire device and method for its manufacture

Title: Silicon nanowire device and method for its manufacture

Abstract

There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.

Inventors:: Okandan, Murat; Draper, Bruce L.; Resnick, Paul J.

Issue Date:: 2017-01-03

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1338051

Patent Number(s):: 9536947

Application Number:: 13/966,553

Assignee:: Sandia Corporation (Albuquerque, NM

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

G - PHYSICS G06 - COMPUTING G06N - COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/3065 - Plasma etching
H01L21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L29/42392 - {fully surrounding the channel, e.g. gate-all-around}
H01L29/0847 - {of field-effect transistors with insulated gate
H01L29/42376 - {characterised by the length or the sectional shape}
H01L29/7853 - {the body having a non-rectangular crossection}
H01L29/0669 - {Nanowires or nanotubes
H01L29/1037 - {and non-planar channel
H01L29/0673 - {oriented parallel to a substrate}

G - PHYSICS G06 - COMPUTING G06N - COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
G06N3/0675 - {using electro-optical, acousto-optical or opto-electronic means}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Patent File Date: 2013 Aug 14

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Okandan, Murat, Draper, Bruce L., and Resnick, Paul J. Silicon nanowire device and method for its manufacture.  United States: N. p., 2017. 
        Web.

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                    Okandan, Murat, Draper, Bruce L., & Resnick, Paul J. Silicon nanowire device and method for its manufacture.  United States.

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                    Okandan, Murat, Draper, Bruce L., and Resnick, Paul J. Tue .  
        "Silicon nanowire device and method for its manufacture".  United States.  https://www.osti.gov/servlets/purl/1338051.

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@article{osti_1338051,

  title        = {Silicon nanowire device and method for its manufacture},

  author       = {Okandan, Murat and Draper, Bruce L. and Resnick, Paul J.},

  abstractNote = {There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in cross-sectional dimensions and having a hexagonal cross-sectional shape due to annealing-induced energy relaxation.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2017},

  month        = {1}

}

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Works referenced in this record:

Multiple orientation nanowires with gate stack stressors
patent-application, February 2013

Chidambarrao, Dureseti; Liu, Xiao; Sekaric, Lidija
US Patent Document 8,368,125
URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect2=PTO1&Sect2=HITOFF&p=1&u=/netahtml/PTO/search-bool.html&r=1&f=G&l=50&d=PALL&RefSrch=yes&Query=PN/8368125

Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor
journal, December 2009

Draper, Bruce; Okandan, Murat; Shaneyfelt, Marty
IEEE Transactions on Nuclear Science, Vol. 56, Issue 6, p. 3274-3279
https://doi.org/10.1109/TNS.2009.2033917

Gate-all-arround single-crystalline silicon nanowire optical sensor
conference, June 2011

Ziaei-Moayyed, M.; Draper, B.; Okandan, M.
Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS)
https://doi.org/10.1109/TRANSDUCERS.2011.5969830

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Title: Silicon nanowire device and method for its manufacture

Abstract

Citation Formats

Multiple orientation nanowires with gate stack stressors patent-application, February 2013

Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor journal, December 2009

Gate-all-arround single-crystalline silicon nanowire optical sensor conference, June 2011

Multiple orientation nanowires with gate stack stressors
patent-application, February 2013

Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor
journal, December 2009

Gate-all-arround single-crystalline silicon nanowire optical sensor
conference, June 2011