Semiconductor adiabatic qubits
Abstract
A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1337627
- Patent Number(s):
- 9530873
- Application Number:
- 14/054,659
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G06 - COMPUTING G06N - COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2013 Oct 15
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 97 MATHEMATICS AND COMPUTING
Citation Formats
Carroll, Malcolm S., Witzel, Wayne, Jacobson, Noah Tobias, Ganti, Anand, Landahl, Andrew J., Lilly, Michael, Nguyen, Khoi Thi, Bishop, Nathaniel, Carr, Stephen M., Bussmann, Ezra, Nielsen, Erik, Levy, James Ewers, Blume-Kohout, Robin J., and Rahman, Rajib. Semiconductor adiabatic qubits. United States: N. p., 2016.
Web.
Carroll, Malcolm S., Witzel, Wayne, Jacobson, Noah Tobias, Ganti, Anand, Landahl, Andrew J., Lilly, Michael, Nguyen, Khoi Thi, Bishop, Nathaniel, Carr, Stephen M., Bussmann, Ezra, Nielsen, Erik, Levy, James Ewers, Blume-Kohout, Robin J., & Rahman, Rajib. Semiconductor adiabatic qubits. United States.
Carroll, Malcolm S., Witzel, Wayne, Jacobson, Noah Tobias, Ganti, Anand, Landahl, Andrew J., Lilly, Michael, Nguyen, Khoi Thi, Bishop, Nathaniel, Carr, Stephen M., Bussmann, Ezra, Nielsen, Erik, Levy, James Ewers, Blume-Kohout, Robin J., and Rahman, Rajib. Tue .
"Semiconductor adiabatic qubits". United States. https://www.osti.gov/servlets/purl/1337627.
@article{osti_1337627,
title = {Semiconductor adiabatic qubits},
author = {Carroll, Malcolm S. and Witzel, Wayne and Jacobson, Noah Tobias and Ganti, Anand and Landahl, Andrew J. and Lilly, Michael and Nguyen, Khoi Thi and Bishop, Nathaniel and Carr, Stephen M. and Bussmann, Ezra and Nielsen, Erik and Levy, James Ewers and Blume-Kohout, Robin J. and Rahman, Rajib},
abstractNote = {A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {12}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Few Electron Double Quantum Dots in InAs/InP Nanowire Heterostructures
journal, February 2007
- Fuhrer, Andreas; Fröberg, Linus E.; Pedersen, Jonas Nyvold
- Nano Letters, Vol. 7, Issue 2
Charge-State Conditional Operation of a Spin Qubit
journal, July 2011
- van Weperen, I.; Armstrong, B. D.; Laird, E. A.
- Physical Review Letters, Vol. 107, Issue 3
Electron transport through double quantum dots
journal, December 2002
- van der Wiel, W. G.; De Franceschi, S.; Elzerman, J. M.
- Reviews of Modern Physics, Vol. 75, Issue 1
Fault-tolerant architecture for quantum computation using electrically controlled semiconductor spins
journal, December 2005
- Taylor, J. M.; Engel, H.-A.; Dür, W.
- Nature Physics, Vol. 1, Issue 3, p. 177-183
Theory of Quantum Annealing of an Ising Spin Glass
journal, March 2002
- Santoro, G. E.
- Science, Vol. 295, Issue 5564
Spectroscopy of few-electron single-crystal silicon quantum dots
journal, May 2010
- Fuechsle, Martin; Mahapatra, S.; Zwanenburg, F. A.
- Nature Nanotechnology, Vol. 5, Issue 7
Quantum annealing with manufactured spins
journal, May 2011
- Johnson, M. W.; Amin, M. H. S.; Gildert, S.
- Nature, Vol. 473, Issue 7346