Title: Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance

Abstract

A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

Inventors:

Chang, Liang-Yi; Gershon, Talia S.; Haight, Richard A.; Lee, Yun Seog

Issue Date:

2016-12-27

Research Org.:

International Business Machines Corp., Armonk, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1337626

Patent Number(s):

9530908

Application Number:

14/540,986

Assignee:

International Business Machines Corporation (Armonk, NY)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02474 - {Sulfides}
H01L21/02477 - {Selenides}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02505 - {consisting of more than two layers}
H01L21/02557 - {Sulfides}
H01L21/0256 - {Selenides}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02628 - {using solutions}
H01L21/02631 - {Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation}
H01L31/02168 - {the coatings being antireflective or having enhancing optical properties for the solar cells}
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/0326 - {comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/065 - the potential barriers being only of the graded gap type
H01L31/072 - the potential barriers being only of the PN heterojunction type
H01L31/0749 - including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
H01L31/1864 - {Annealing}
H01L31/1884 - {Manufacture of transparent electrodes, e.g. TCO, ITO}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy
Y02E10/541 - CuInSe2 material PV cells

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DOE Contract Number:  

EE0006334

Resource Type:

Patent

Resource Relation:

Patent File Date: 2014 Nov 13

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 14 SOLAR ENERGY