Methods for the additive manufacturing of semiconductor and crystal materials
Abstract
A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1333301
- Patent Number(s):
- 9499406
- Application Number:
- 9,499,406
- Assignee:
- Consolidated Nuclear Security, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL B01J - CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
- DOE Contract Number:
- NA0001942
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Jun 26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Stowe, Ashley C., and Speight, Douglas. Methods for the additive manufacturing of semiconductor and crystal materials. United States: N. p., 2016.
Web.
Stowe, Ashley C., & Speight, Douglas. Methods for the additive manufacturing of semiconductor and crystal materials. United States.
Stowe, Ashley C., and Speight, Douglas. Tue .
"Methods for the additive manufacturing of semiconductor and crystal materials". United States. https://www.osti.gov/servlets/purl/1333301.
@article{osti_1333301,
title = {Methods for the additive manufacturing of semiconductor and crystal materials},
author = {Stowe, Ashley C. and Speight, Douglas},
abstractNote = {A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 22 00:00:00 EST 2016},
month = {Tue Nov 22 00:00:00 EST 2016}
}
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