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Title: Methods for the additive manufacturing of semiconductor and crystal materials

A method for the additive manufacturing of inorganic crystalline materials, including: physically combining a plurality of starting materials that are used to form an inorganic crystalline compound to be used as one or more of a semiconductor, scintillator, laser crystal, and optical filter; heating or melting successive regions of the combined starting materials using a directed heat source having a predetermined energy characteristic, thereby facilitating the reaction of the combined starting materials; and allowing each region of the combined starting materials to cool in a controlled manner, such that the desired inorganic crystalline compound results. The method also includes, prior to heating or melting the successive regions of the combined starting materials using the directed heat source, heating the combined starting materials to facilitate initial reaction of the combined starting materials. The method further includes translating the combined starting materials and/or the directed heat source between successive locations. The method still further includes controlling the mechanical, electrical, photonic, and/or optical properties of the inorganic crystalline compound.
Issue Date:
OSTI Identifier:
Consolidated Nuclear Security, LLC (Oak Ridge, TN) Y-12
Patent Number(s):
Application Number:
Contract Number:
Resource Relation:
Patent File Date: 2015 Jun 26
Research Org:
Consolidated Nuclear Security, LLC, Oak Ridge, TN (United States)
Sponsoring Org:
Country of Publication:
United States

Works referenced in this record:

Growth and properties of LiGaX2 (X = S, Se, Te) single crystals for nonlinear optical applications in the mid-IR
journal, April 2003
  • Isaenko, L.; Yelisseyev, A.; Lobanov, S.
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  • DOI: 10.1002/crat.200310047

LiGaTe2:‚ÄČ A New Highly Nonlinear Chalcopyrite Optical Crystal for the Mid-IR
journal, June 2005
  • Isaenko, L.; Krinitsin, P.; Vedenyapin, V.
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