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Title: Three dimensional strained semiconductors

Abstract

In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1331170
Patent Number(s):
9,490,318
Application Number:
13/912,885
Assignee:
Lawrence Livermore National Security, LLC
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Jun 07
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, and Shao, Qinghui. Three dimensional strained semiconductors. United States: N. p., 2016. Web.
Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, & Shao, Qinghui. Three dimensional strained semiconductors. United States.
Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, and Shao, Qinghui. Tue . "Three dimensional strained semiconductors". United States. https://www.osti.gov/servlets/purl/1331170.
@article{osti_1331170,
title = {Three dimensional strained semiconductors},
author = {Voss, Lars and Conway, Adam and Nikolic, Rebecca J. and Leao, Cedric Rocha and Shao, Qinghui},
abstractNote = {In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

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