Global to push GA events into
skip to main content

Title: Semiconductor ferroelectric compositions and their use in photovoltaic devices

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.
Inventors:
; ; ; ;
Issue Date:
OSTI Identifier:
1330710
Assignee:
The Trustees Of The University Of Pennsylvania (Philadelphia, PA) CHO
Patent Number(s):
9,484,475
Application Number:
13/649,154
Contract Number:
FG02-07ER46431
Resource Relation:
Patent File Date: 2012 Oct 11
Research Org:
The Trustees Of The University Of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Other works cited in this record:

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials
journal, November 2013
  • Grinberg, Ilya; West, D. Vincent; Torres, Maria
  • Nature, Vol. 503, Issue 7477, p. 509-512
  • DOI: 10.1038/nature12622

Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies
journal, October 1986

Photoassisted water decomposition by ferroelectric lead zirconate titanate ceramics with anomalous photovoltaic effects
journal, June 1986
  • Inoue, Yasunobu; Sato, Kiyoshi; Sato, Kazunori
  • The Journal of Physical Chemistry, Vol. 90, Issue 13, p. 2809-2810
  • DOI: 10.1021/j100404a006

Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5−xBix)O3 semiconductors
journal, November 2007

First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics
journal, September 2012

Similar records in DOepatents and OSTI.GOV collections: