Ultrananocrystalline diamond contacts for electronic devices
Abstract
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1330709
- Patent Number(s):
- 9484474
- Application Number:
- 14/790,995
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY) ; The Research Foundation for the State University of New York (Albany, NY)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-98CH10886; SC0012704; AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Jul 02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sumant, Anirudha V., Smedley, John, and Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States: N. p., 2016.
Web.
Sumant, Anirudha V., Smedley, John, & Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States.
Sumant, Anirudha V., Smedley, John, and Muller, Erik. Tue .
"Ultrananocrystalline diamond contacts for electronic devices". United States. https://www.osti.gov/servlets/purl/1330709.
@article{osti_1330709,
title = {Ultrananocrystalline diamond contacts for electronic devices},
author = {Sumant, Anirudha V. and Smedley, John and Muller, Erik},
abstractNote = {A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}
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