Title: Ultrananocrystalline diamond contacts for electronic devices

Abstract

A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

Inventors:

Sumant, Anirudha V.; Smedley, John; Muller, Erik

Issue Date:

2016-11-01

Research Org.:

Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1330709

Patent Number(s):

9484474

Application Number:

14/790,995

Assignee:

UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY) ; The Research Foundation for the State University of New York (Albany, NY)

Patent Classifications (CPCs):

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/546 - Polycrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/1804 - {comprising only elements of Group IV of the Periodic System}
H01L31/0288 - characterised by the doping material

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/547 - Monocrystalline silicon PV cells

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L29/1602 - {Diamond}
H01L31/028 - including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L21/041 - {Making n- or p-doped regions}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01L31/022408 - {for devices characterised by at least one potential jump barrier or surface barrier}
H01L21/043 - {Ohmic electrodes}
H01L31/03682 - {including only elements of Group IV of the Periodic System}

Show less

DOE Contract Number:  

AC02-98CH10886; SC0012704; AC02-06CH11357

Resource Type:

Patent

Resource Relation:

Patent File Date: 2015 Jul 02

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE