Ultrananocrystalline diamond contacts for electronic devices
Abstract
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1330709
- Patent Number(s):
- 9,484,474
- Application Number:
- 14/790,995
- Assignee:
- UChicago Argonne, LLC (Chicago, IL); Brookhaven Science Associates, LLC (Upton, NY) ; The Research Foundation for the State University of New York (Albany, NY)
- DOE Contract Number:
- AC02-98CH10886; SC0012704; AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Jul 02
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sumant, Anirudha V., Smedley, John, and Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States: N. p., 2016.
Web.
Sumant, Anirudha V., Smedley, John, & Muller, Erik. Ultrananocrystalline diamond contacts for electronic devices. United States.
Sumant, Anirudha V., Smedley, John, and Muller, Erik. Tue .
"Ultrananocrystalline diamond contacts for electronic devices". United States. https://www.osti.gov/servlets/purl/1330709.
@article{osti_1330709,
title = {Ultrananocrystalline diamond contacts for electronic devices},
author = {Sumant, Anirudha V. and Smedley, John and Muller, Erik},
abstractNote = {A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Piezoresistivity in vapor‐deposited diamond films
journal, June 1992
- Aslam, M.; Taher, I.; Masood, A.
- Applied Physics Letters, Vol. 60, Issue 23, p. 2923-2925
Planar ultrananocrystalline diamond field emitter in accelerator radio frequency electron injector: Performance metrics
journal, November 2014
- Baryshev, Sergey V.; Antipov, Sergey; Shao, Jiahang
- Applied Physics Letters, Vol. 105, Issue 20, Article No. 203505
The CVD of Nanodiamond Materials
journal, July 2008
- Butler, James E.; Sumant, Anirudha V.; Barnard, Amanda S.
- Chemical Vapor Deposition, Vol. 14, Issue 7-8, p. 145-160
Optically Transparent Diamond Electrode for Use in IR Transmission Spectroelectrochemical Measurements
journal, October 2007
- Dai, Yingrui; Proshlyakov, Denis A.; Zak, Jerzy K.
- Analytical Chemistry, Vol. 79, Issue 19, p. 7526-7533
Configurational, electronic entropies and the thermoelectric properties of nanocarbon ensembles
journal, April 2008
- Gruen, Dieter M.; Bruno, Paola; Xie, Ming
- Applied Physics Letters, Vol. 92, Issue 14, Article No. 143118
Giant piezoresistance effect in silicon nanowires
journal, October 2006
- He, Rongrui; Yang, Peidong
- Nature Nanotechnology, Vol. 1, Issue 1, p. 42-46
Silicon Device Scaling to the Sub-10-nm Regime
journal, December 2004
- Ieong, Meikei; Doris, Bruce; Kedzierski, Jakub
- Science, Vol. 306, Issue 5704, p. 2057-2060
High quantum efficiency ultrananocrystalline diamond photocathode for photoinjector applications
journal, September 2014
- Pérez Quintero, Kenneth J.; Antipov, Sergey; Sumant, Anirudha V.
- Applied Physics Letters, Vol. 105, Issue 12, Article No. 123103
Properties of Hydrogen Terminated Diamond as a Photocathode
journal, March 2011
- Rameau, J. D.; Smedley, J.; Muller, E. M.
- Physical Review Letters, Vol. 106, Issue 13, Article No. 137602
Optical and Electrochemical Properties of Optically Transparent, Boron-Doped Diamond Thin Films Deposited on Quartz
journal, December 2002
- Stotter, Jason; Zak, Jerzy; Behler, Zack
- Analytical Chemistry, Vol. 74, Issue 23, p. 5924-5930
Polycrystalline diamond films as prospective UV photocathodes
conference, December 2000
- Tremsin, Anton S.; Siegmund, Oswald H. W.
- Instrumentation for UV/EUV Astronomy and Solar Missions
Review on diamond based piezoresistive sensors
conference, January 1998
- Werner, M.; Gluche, P.; Adamschik, M.